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LMBTA55LT1G PDF预览

LMBTA55LT1G

更新时间: 2024-10-28 12:01:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管驱动
页数 文件大小 规格书
3页 90K
描述
Driver Transistors PNP Silicon RoHS requirements.

LMBTA55LT1G 数据手册

 浏览型号LMBTA55LT1G的Datasheet PDF文件第2页浏览型号LMBTA55LT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
DriverTransistors  
PNP Silicon  
LMBTA55LT1G  
LMBTA56LT1G  
We declare that the material of product  
compliance with RoHS requirements.  
3
1
2
MAXIMUM RATINGS  
Value  
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
LMBTA55  
LMBTA56  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
–60  
–60  
–80  
3
–80  
Vdc  
COLLECTOR  
–4.0  
–500  
Vdc  
1
mAdc  
BASE  
2
THERMAL CHARACTERISTICS  
Characteristic  
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
225  
mW  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
T J , T stg  
–55 to +150  
°C  
DEVICE MARKING  
LMBTA55LT1G = 2H; LMBTA56LT1G = 2GM  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (3)  
(I C = –1.0 mAdc, I B= 0 )  
V (BR)CEO  
Vdc  
LMBTA55  
LMBTA56  
–60  
–80  
Emitter–Base Breakdown Voltage  
V (BR)EBO  
–4.0  
Vdc  
(I E = –100 µAdc, I C = 0 )  
Collector Cutoff Current  
( V CE = –60Vdc, I B = 0)  
Collector Cutoff Current  
( V CB = –60Vdc, I E= 0)  
I CES  
I CBO  
–0.1  
µAdc  
µAdc  
LMBTA55  
LMBTA56  
–0.1  
–0.1  
( V CB = –80Vdc, I E= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width  
<300 µs, Duty Cycle  
<2.0%.  
Rev.O 1/3  

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