Datasheet > LMBTA44LT1G

LMBTA44LT1G

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管局域网
页数	文件大小	规格书
3页	83K
描述
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400

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LMBTA44LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

LMBTA44LT1G

NPN EPITAXIAL PLANAR TRANSISTOR

We declare that the material of product

compliance with RoHS requirements.

Description

SOT– 23

The LMBTA44LT1G is designed for application

that requires high voltage.

COLLECTOR

Features

• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA

• Complementary to LMBTA94LT1G

BASE

DEVICE MARKING

LMBTA44LT1G = 3D

EMITTER

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 350 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 400 V

VCEO Collector to Emitter Voltage................................................................................... 400 V

VEBO Emitter to Base Voltage............................................................................................. 5 V

IC Collector Current ...................................................................................................... 200 mA

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= 100µA, I_E=0

I_C= 1mA , I_B=0

MIN

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=400V, I_E=0

V_CE=350V

0.1

µA

I_CEO

Collector cut-off current

I_EBO

V_EB= 4V, I_C=0

0.1

300

Emitter cut-off current

H_FE(1)

V_CE=10V, I_C=10 mA

V_CE=10V, I_C=1mA

V_CE=10V, I_C=50 mA

I_C=10 mA, I_B=1mA

I_C=50 mA, I_B=5mA

I_C=10 mA, I_B= 1 mA

V_CE=10V, I_C=20mA

DC current gain

H_FE(2)

H_FE(3)

V_CE(sat)

V_BE(sat)

f _T

0.2

0.3

0.9

Collector-emitter saturation voltage

Base-emitter sataration voltage

Transition frequency

MHz

Rev.O 1/3

12 3

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