生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.8 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.3 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LMBTA43LT3G | LRC |
获取价格 |
HighVoltageTransistors RoHS requirements. | |
LMBTA44LT1G | LRC |
获取价格 |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400 | |
LMBTA55LT1G | LEIDITECH |
获取价格 |
Driver Transistors PNP Silicon | |
LMBTA55LT1G | LRC |
获取价格 |
Driver Transistors PNP Silicon RoHS requirements. | |
LMBTA55LT3G | LEIDITECH |
获取价格 |
Driver Transistors PNP Silicon | |
LMBTA55WT1G | LRC |
获取价格 |
Driver Transistors PNP Silicon RoHS requirements. | |
LMBTA55WT3G | LRC |
获取价格 |
Driver Transistors PNP Silicon RoHS requirements. | |
LMBTA56LT3G | LEIDITECH |
获取价格 |
Driver Transistors PNP Silicon | |
LMBTA56WT1G | LRC |
获取价格 |
Driver Transistors PNP Silicon RoHS requirements. | |
LMBTA56WT3G | LRC |
获取价格 |
Driver Transistors PNP Silicon RoHS requirements. |