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LMBTA43LT1G PDF预览

LMBTA43LT1G

更新时间: 2024-10-28 03:51:39
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管光电二极管
页数 文件大小 规格书
4页 80K
描述
HighVoltageTransistors

LMBTA43LT1G 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8Is Samacsys:N
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

LMBTA43LT1G 数据手册

 浏览型号LMBTA43LT1G的Datasheet PDF文件第2页浏览型号LMBTA43LT1G的Datasheet PDF文件第3页浏览型号LMBTA43LT1G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
HighVoltageTransistors  
ƽ Pb-Free Package is available.  
LMBTA42LT1  
LMBTA43LT1  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
LMBTA42LT1  
1D  
SOT-23  
3000/Tape&Reel  
3
1D  
(Pb-Free)  
LMBTA42LT1G  
LMBTA43LT1  
LMBTA43LT1G  
SOT-23  
SOT-23  
SOT-23  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
1
M1E  
2
M1E  
(Pb-Free)  
SOT–23  
MAXIMUM RATINGS  
Rating  
Value  
LMBTA42 LMBTA43  
Symbol  
Unit  
Vdc  
3
COLLECTOR  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
V
V
CEO  
300  
300  
6.0  
200  
200  
6.0  
CBO  
EBO  
C
Vdc  
1
BASE  
Vdc  
2
Collector Current — Continuous  
I
500  
mAdc  
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
= 25°C  
P
D
225  
mW  
TA  
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
P
θJA  
556  
D
300  
mW  
Alumina Substrate, (2) T  
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
417  
T
J
, T stg  
–55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T  
A
= 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage(3)  
V (BR)CEO  
Vdc  
(I C = 1.0 mAdc, I B = 0)  
LMBTA42  
LMBTA43  
300  
200  
Collector–Base Breakdown Voltage  
V (BR)CBO  
Vdc  
(I C= 100 µAdc, I E= 0)  
LMBTA42  
LMBTA43  
300  
200  
Emitter–Base Breakdown Voltage  
(I E= 100 µAdc, I C= 0)  
V (BR)EBO  
I CBO  
6.0  
Vdc  
Collector Cutoff Current  
( V CB= 200Vdc, I E= 0)  
( V CB= 160Vdc, I E= 0)  
Emitter Cutoff Current  
( V EB= 6.0Vdc, I C= 0)  
µAdc  
LMBTA42  
LMBTA43  
0.1  
0.1  
I EBO  
µAdc  
LMBTA42  
LMBTA43  
0.1  
0.1  
( V EB= 4.0Vdc, I C= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 µs, Duty Cycle <2.0%.  
<
LMBTA42/43LT1-1/4  

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