Datasheet > LMBTA42LT1G_11

LMBTA42LT1G_11

更新时间： 2024-10-28 12:01:31

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HighVoltageTransistors RoHS requirements.

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LMBTA42LT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

HighVoltageTransistors

_ƽWe declare that the material of product

compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

LMBTA42LT1G

LMBTA43LT1G

Device

Marking

Package

SOT-23

Shipping

LMBTA42LT1G

LMBTA42LT3G

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

LMBTA43LT1G

LMBTA43LT3G

M1E

SOT–23

MAXIMUM RATINGS

Value

Rating

Symbol

LMBTA42 LMBTA43

Unit

Vdc

COLLECTOR

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

300

6.0

200

6.0

CBO

EBO

Vdc

BASE

Vdc

Collector Current — Continuous

mAdc

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

= 25°C

225

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

556

300

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T ^stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V _(BR)CEO

Vdc

(I _C= 1.0 mAdc, I _B= 0)

LMBTA42

LMBTA43

300

200

—

Collector–Base Breakdown Voltage

V _(BR)CBO

Vdc

(I _C= 100 µAdc, I _E= 0)

LMBTA42

LMBTA43

300

200

—

Emitter–Base Breakdown Voltage

(I _E= 100 µAdc, I _C= 0)

V _(BR)EBO

I _CBO

6.0

—

Vdc

Collector Cutoff Current

( V _CB= 200Vdc, I _E= 0)

( V _CB= 160Vdc, I _E= 0)

Emitter Cutoff Current

( V _EB= 6.0Vdc, I _C= 0)

µAdc

LMBTA42

LMBTA43

—

0.1

I _EBO

µAdc

LMBTA42

LMBTA43

—

0.1

( V _EB= 4.0Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 µs, Duty Cycle <2.0%.

Rev.O 1/6

12 3 4 5 6

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