Datasheet > LMBTA13LT3G

LMBTA13LT3G

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体放大器晶体管达林顿晶体管
页数	文件大小	规格书
6页	301K
描述
Darlington Amplifier Transistors RoHS requirements.

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数据手册

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LMBTA13LT3G 数据手册

LESHAN RADIO COMPANY, LTD.

DarlingtonAmplifierTransistors

We declare that the material of product

compliance with RoHS requirements.

ORDERING INFORMATION

LMBTA13LT1G

LMBTA14LT1G

Device

Marking

Shipping

LMBTA13LT1G

LMBTA14LT1G

LMBTA13LT3G

LMBTA14LT3G

3000/Tape & Reel

10000/Tape & Reel

MAXIMUM RATINGS

Rating

Symbol

V _CES

V _CBO

V _EBO

I _C

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

SOT–23

Vdc

COLLECTOR

Collector Current — Continuous

300

mAdc

THERMAL CHARACTERISTICS

Characteristic

BASE

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

EMITTER

P _D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

°C

T _J, T _stg

–55 to +150

DEVICE MARKING

LMBTA13LT1G = 1M; LMBTA14LT1G = 1N;

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I _C= 100 µAdc, V _BE= 0)

V _(BR)CEO

—

Vdc

nAdc

Collector Cutoff Current

I _CBO

100

( V _CB= 30Vdc, I _E= 0)

Emitter Cutoff Current

I _EBO

( V _EB= 10Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/6

12 3 4 5 6

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