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LMBTA13LT1 PDF预览

LMBTA13LT1

更新时间: 2024-10-28 11:37:03
品牌 Logo 应用领域
乐山 - LRC 晶体放大器晶体管达林顿晶体管
页数 文件大小 规格书
6页 219K
描述
Darlington Amplifier Transistors

LMBTA13LT1 数据手册

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LESHAN RADIO COMPANY, LTD.  
DarlingtonAmplifierTransistors  
COLLECTOR  
3
LMBTA13LT1  
LMBTA14LT1  
1
BASE  
3
2
EMITTER  
1
MAXIMUM RATINGS  
2
Rating  
Symbol  
V CES  
V CBO  
V EBO  
I C  
Value  
30  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Vdc  
Vdc  
SOT–23  
30  
10  
Vdc  
300  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
°C/W  
°C  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LMBTA13LT1 = 1M; LMBTA14LT1 = 1N  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I C = 100 µAdc, V BE = 0)  
V (BR)CEO  
30  
Vdc  
nAdc  
nAdc  
Collector Cutoff Current  
I CBO  
100  
100  
( V CB = 30Vdc, I E = 0)  
Emitter Cutoff Current  
I EBO  
( V EB = 10Vdc, I C = 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
LMBTA13–1/6  

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