Datasheet > LMBTA05WT1G

LMBTA05WT1G

更新时间： 2024-10-29 01:11:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	169K
描述
Driver Transistors RoHS requirements.

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LMBTA05WT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

LMBTA05WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Driver Transistors

LMBTA05WT1G

LMBTA06WT1G

FEATURES

•

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Value

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

LMBTA05 LMBTA06

Unit

Vdc

SOT–323 / SC – 70

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

4.0

Vdc

500

mAdc

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

BASE

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

150

1.2

EMITTER

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

833

°C/W

200

1.6

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

625

°C/W

T _J, T _stg

–55 to +150

°C

DEVICE MARKING

LMBTA05WT1G = 1H, LMBTA06WT1G = 1GM;

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V _(BR)CEO

Vdc

(I _C= 1.0 mAdc, I _B= 0)

LMBTA05

4.0

—

LMBTA06

Emitter–Base Breakdown Voltage

(I _E= 100 µAdc, I _C= 0)

V _(BR)EBO

I _CES

Vdc

µAdc

Collector Cutoff Current

( V _CE= 60Vdc, I _B= 0)

—

0.1

Emitter Cutoff Current

I _CBO

( V _CB= 60Vdc, I _E= 0)

LMBTA05

LMBTA06

—

0.1

( V _CB= 80Vdc, I _E= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

300 µs, Duty Cycle

< 2.0%.

Rev.O 1/3

12 3

中文翻译

下载PDF

与LMBTA05WT1G相关器件

型号	品牌	获取价格	描述	数据表
LMBTA05WT3G	LRC	获取价格	Driver Transistors RoHS requirements.
LMBTA06LT1	LRC	获取价格	Driver Transistors
LMBTA06LT1G	LRC	获取价格	Driver Transistors
LMBTA06LT3G	LRC	获取价格	Driver Transistors RoHS requirements.
LMBTA06WT1G	LRC	获取价格	Driver Transistors RoHS requirements.
LMBTA06WT3G	LRC	获取价格	Driver Transistors RoHS requirements.
LMBTA13LT1	LRC	获取价格	Darlington Amplifier Transistors
LMBTA13LT1G	LRC	获取价格	Darlington Amplifier Transistors RoHS requirements.
LMBTA13LT3G	LRC	获取价格	Darlington Amplifier Transistors RoHS requirements.
LMBTA14LT1	LRC	获取价格	Darlington Amplifier Transistors