Datasheet > LMBT6520LT1G

LMBT6520LT1G

更新时间： 2024-11-09 05:42:23

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管高压
页数	文件大小	规格书
6页	219K
描述
High Voltage Transistor

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中文翻译

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技术参数
数据手册

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LMBT6520LT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.78
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	20	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	40 MHz	Base Number Matches：	1

LMBT6520LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

High Voltage Transistor

We declare that the material of product

compliance with RoHS requirements.

LMBT6520LT1G

Ordering Information

Device

Marking

2 Z

Shipping

3000/Tape&Reel

LMBT6520LT1G

LMBT6520LT3G

10000/Tape&Reel

2 Z

MAXIMUM RATINGS

Rating

SOT–23

Symbol

V _CEO

V _CBO

V _EBO

I _B

Value

–350

–5.0

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Base Current

COLLECTOR

Vdc

BASE

Vdc

–250

–500

Collector Current — Continuous

I _C

mAdc

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

LMBT6520LT1G = 2Z

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I _C= –1.0 mA )

Collector–Base Breakdown Voltage(I _E= –100 µA )

Emitter–Base Breakdown Voltage(I _E= –10 µA)

Collector Cutoff Current( V _CB= –250V )

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _CBO

–350

–5.0

—

Vdc

—

–50

Emitter Cutoff Current( V _EB= –4.0V )

I _EBO

—

–50

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1/6

12 3 4 5 6

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