Datasheet > LMBT5550LT1G

LMBT5550LT1G

更新时间： 2024-09-16 11:37:03

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
5页	113K
描述
High Voltage Transistors

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数据手册

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LMBT5550LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

High Voltage Transistors

FEATURE

ƽPb-Free package is available.

LMBT5550LT1

LMBT5551LT1

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LMBT5550LT1

M1F

3000/Tape&Reel

LMBT5550LT1G

(Pb-Free)

M1F

3000/Tape&Reel

LMBT5551LT1

LMBT5551LT1G

(Pb-Free)

MAXIMUM RATINGS

Rating

SOT–23

Symbol

Value

140

160

6.0

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

COLLECTOR

EBO

Collector Current — Continuous

600

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

= 25°C

225

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

556

300

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, Tstg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V _(BR)CEO

Vdc

(I _C= 1.0 mAdc, I _B= 0)

LMBT5550

140

160

—

LMBT5551

Collector–Base Breakdown Voltage

V _(BR)CBO

Vdc

(I _C= 100 µAdc, I _E= 0)

LMBT5550

LMBT5551

160

180

—

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

Collector Cutoff Current

( V _CB= 100Vdc, I _E= 0)

( V _CB= 120Vdc, I _E= 0)

V _(BR)EBO

I _CBO

6.0

—

LMBT5550

LMBT5551

—

100

nAdc

( V _CB= 100Vdc, I _E= 0, T _A=100 °C) LMBT5550

( V _CB= 120Vdc, I _E= 0, T _A=100 °C) LMBT5551

Emitter Cutoff Current

100

µAdc

I _EBO

—

nAdc

( V _BE= 4.0Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

LMBT5550LT1–1/5

12 3 4 5

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