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LMBT5087LT3G PDF预览

LMBT5087LT3G

更新时间: 2024-11-06 12:26:39
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
7页 163K
描述
Low Noise Transistor PNP Silicon RoHS requirements.

LMBT5087LT3G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):250
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):40 MHz
Base Number Matches:1

LMBT5087LT3G 数据手册

 浏览型号LMBT5087LT3G的Datasheet PDF文件第2页浏览型号LMBT5087LT3G的Datasheet PDF文件第3页浏览型号LMBT5087LT3G的Datasheet PDF文件第4页浏览型号LMBT5087LT3G的Datasheet PDF文件第5页浏览型号LMBT5087LT3G的Datasheet PDF文件第6页浏览型号LMBT5087LT3G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Low Noise Transistor  
PNP Silicon  
LMBT5087LT1G  
We declare that the material of product compliance with RoHS requirements.  
3
ORDERING INFORMATION  
1
Device  
Shipping  
Marking  
2
LMBT5087LT1G  
LMBT5087LT3G  
2Q  
2Q  
3000/Tape & Reel  
10000/Tape & Reel  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
Value  
– 50  
Unit  
Vdc  
3
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
COLLECTOR  
V CBO  
– 50  
Vdc  
V
– 3.0  
– 50  
Vdc  
1
EBO  
BASE  
IC  
mAdc  
DEVICE MARKING  
2
EMITTER  
LMBT5087LT1G =2Q  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation RF-5 Board (1)  
T A =25 °C  
P D  
225  
mW  
Derate above 25°C  
1.8  
mW/°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
PD  
556  
300  
°C/W  
mW  
Alumina Substrate, (2) T A = 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
T J , T stg  
–55to+150  
ELECTRICAL CHARACTERISTICS (T A = 2C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I C = –1.0 mAdc, I B = 0)  
V (BR)CEO  
V (BR)CBO  
I CBO  
– 50  
– 50  
Vdc  
Vdc  
Collector–Base Breakdown Voltage  
(I C = –100 µAdc, I E = 0)  
Collector Cutoff Current  
n Adc  
(V CB = –10 Vdc, I E= 0)  
–10  
–50  
(V CB = –35 Vdc, I E= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
1/7  

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