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LMBT4413DW1T3G PDF预览

LMBT4413DW1T3G

更新时间: 2024-11-06 12:26:39
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
11页 793K
描述
DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

LMBT4413DW1T3G 数据手册

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LESHAN RADIO COMPANY, LTD.  
DUAL SMALL SIGNAL SURFACE  
MOUNT TRANSISTOR  
LMBT4413DW1T1G  
FEATURE  
6
5
4
ƽ
We declare that the material of product is ROHS compliant  
and halogen free.  
1
2
3
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
SOT-363/SC-88  
LMBT4413DW1T1G  
LMBT4413DW1T3G  
K13  
K13  
3000/Tape&Reel  
10000/Tape&Reel  
6
5
4
C1  
B2  
E2  
MAXIMUM RATINGS  
Rating  
-
NPN  
Symbol  
Value  
40  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V CEO  
V CBO  
V EBO  
I C  
Q2  
Q1  
60  
Vdc  
6.0  
Vdc  
E1  
C2  
B1  
Collector Current — Continuous  
600  
mAdc  
1
2
3
MAXIMUM RATINGS  
Rating  
-PNP  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
-40  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
-60  
Vdc  
-5.0  
-600  
Vdc  
Collector Current — Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
P
D
225  
mW  
T
A = 25°C  
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
556  
P
D
300  
mW  
Alumina Substrate, (2) T  
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
417  
T
J
, Tstg  
–55 to +150  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
1/11  

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