Datasheet > LMBT4403WT3G

LMBT4403WT3G

更新时间： 2024-11-10 01:11:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	386K
描述
General Purpose Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LMBT4403WT3G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNP Silicon

LMBT4403W T1G

S-LMBT4403W T1G

•

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ORDERING INFORMATION

Marking

Device

Shipping

LMBT4403WT1G

3000/Tape & Reel

10000/Tape & Reel

S-LMBT4403WT1G

LMBT4403WT3G

S-LMBT4403WT3G

SC-70

MAXIMUM RATINGS

Rating

Symbol

Value

– 40

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

– 40

Vdc

COLLECTOR

– 5.0

– 600

Vdc

Collector Current — Continuous

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

T = 25°C

150

°C/W

°C

Thermal Resistance,

Junction−to−Ambient

833

Junction and Storage Temperature

T , T

−55 to +150

stg

DEVICE MARKING

LMBT4403WT1G = 2T

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= –1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BEV

Vdc

– 40

– 5.0

—

Collector–Base Breakdown Voltage

(I _C= –0.1mAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= –0.1mAdc, I _C= 0)

Vdc

—

Base Cutoff Current

µAdc

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

Collector Cutoff Current

– 0.1

I _CEX

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

—

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

<300 µs; Duty Cycle <2.0%.

Rev.A 1/6

12 3 4 5 6

中文翻译

下载PDF

与LMBT4403WT3G相关器件

型号	品牌	获取价格	描述	数据表
LMBT4413DW1T1G	LRC	获取价格	DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
LMBT4413DW1T3G	LRC	获取价格	DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
LMBT5087LT1	LRC	获取价格	Low Noise Transistor
LMBT5087LT1G	LRC	获取价格	Low Noise Transistor
LMBT5087LT1G_11	LRC	获取价格	Low Noise Transistor PNP Silicon RoHS requirements.
LMBT5087LT3G	LRC	获取价格	Low Noise Transistor PNP Silicon RoHS requirements.
LMBT5401DW1T1G	LRC	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
LMBT5401LT1	LRC	获取价格	High Voltage Transistor
LMBT5401LT1G	LRC	获取价格	High Voltage Transistor
LMBT5401LT1G_11	LRC	获取价格	High Voltage Transistor RoHS requirements.