Datasheet > LMBT4403WT1G

LMBT4403WT1G

更新时间： 2024-11-07 01:11:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	386K
描述
General Purpose Transistors

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数据手册

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LMBT4403WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNP Silicon

LMBT4403W T1G

S-LMBT4403W T1G

•

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ORDERING INFORMATION

Marking

Device

Shipping

LMBT4403WT1G

3000/Tape & Reel

10000/Tape & Reel

S-LMBT4403WT1G

LMBT4403WT3G

S-LMBT4403WT3G

SC-70

MAXIMUM RATINGS

Rating

Symbol

Value

– 40

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

– 40

Vdc

COLLECTOR

– 5.0

– 600

Vdc

Collector Current — Continuous

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

T = 25°C

150

°C/W

°C

Thermal Resistance,

Junction−to−Ambient

833

Junction and Storage Temperature

T , T

−55 to +150

stg

DEVICE MARKING

LMBT4403WT1G = 2T

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= –1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BEV

Vdc

– 40

– 5.0

—

Collector–Base Breakdown Voltage

(I _C= –0.1mAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= –0.1mAdc, I _C= 0)

Vdc

—

Base Cutoff Current

µAdc

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

Collector Cutoff Current

– 0.1

I _CEX

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

—

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

<300 µs; Duty Cycle <2.0%.

Rev.A 1/6

12 3 4 5 6

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