Datasheet > LMBT2506QLT3G

LMBT2506QLT3G

更新时间： 2024-09-16 00:55:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	112K
描述
General Purpose Transistors NPN Silicon

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数据手册

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LMBT2506QLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

LMBT2506QLT1G

Series

NPN Silicon

FEATURE

ƽHigh current capacity in compact package.

ƽEpitaxial planar type.

ƽPNP complement:

LMBT2516QLT1G

We declare that the material of product compliance with RoHS requirements.

SOT–23

DEVICE MARKING AND ORDERING INFORMATION

COLLECTOR

Shipping

Device

Marking

LMBT2506PLT1G

3000/Tape&Reel

1GA

LMBT2506PLT3G

LMBT2506QLT1G

10000/Tape&Reel

3000/Tape&Reel

1GA

1GC

BASE

EMITTER

LMBT2506QLT3G

LMBT2506RLT1G

LMBT2506RLT3G

LMBT2506SLT1G

LMBT2506SLT3G

10000/Tape&Reel

3000/Tape&Reel

1GC

1GE

10000/Tape&Reel

3000/Tape&Reel

1GE

1GF

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_CBO

V_EBO

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

12 3

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