Datasheet > LMBT2369A

LMBT2369A

更新时间： 2024-09-15 11:37:03

品牌	Logo	应用领域
乐山 - LRC		晶体开关晶体管
页数	文件大小	规格书
6页	241K
描述
Switching Transistors

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中文翻译

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数据手册

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LMBT2369A 数据手册

LESHAN RADIO COMPANY, LTD.

SwitchingTransistors

COLLECTOR

LMBT2369LT1

LMBT2369ALT1

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CES

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

SC-70/SOT–323

Vdc

4.5

200

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

DEVICE MARKING

LMBT2369LT1 = M1J, LMBT2369ALT1 = 1JA

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 10 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CES

V _(BR)CBO

4.5

—

Vdc

Collector–Emitter Breakdown Voltage

(I _C= 10 µAdc, V _BE= 0)

Collector–Base Breakdown Voltage

(I _C= 10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

V _(BR)EBO

I _CBO

Vdc

Collector Cutoff Current( V _CB= 20Vdc, I _E= 0)

( V _CB= 20Vdc, I _E= 0, T _A=150 °C)

Collector Cutoff Current

—

0.4

µAdc

I _CES

—

0.4

µAdc

( V _CE= 20Vdc, V _BE= 0)

LMBT2369A

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

< 300 µs, Duty Cycle < 2.0%.

LMBT2369LT1–1/6

12 3 4 5 6

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