Datasheet > LMBD7000WT1G

LMBD7000WT1G

更新时间： 2024-01-30 20:46:16

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
3页	96K
描述
Dual Switching Diode

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数据手册

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LMBD7000WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Switching Diode

LMBD7000WT1G

FETURE

We declare that the material of product

compliance with RoHS requirements.

ORDERING INFORMATION

Device

Package

Shipping

LMBD7000WT1G SC-70/SOT-323 3000/Tape & Reel

LMBD7000WT3G

SC-70/SOT-323

10000/Tape & Reel

SC-70/SOT-323

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Value

100

Unit

Reverse Voltage

Vdc

Forward Current

I _F

200

mAdc

Peak Forward Surge Current

I_FM(surge)

500

THERMALCHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board ⁽¹⁾

CATHODE

Symbol

Max

Unit

ANODE

200

P _D

T _A= 25°C

CATHODE/ANODE

1.6

Derate above 25°C

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _{θ JA}

556

300

Alumina Substrate, ⁽²⁾T _A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _{θ JA}

T _J, T _stg

–55 to +150

DEVICEMARKING

LMBD7000WT1G=M5C

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)(EACH DIODE)

Characteristic

OFFCHARACTERISTICS

Reverse Breakdown Voltage

(I _(BR)= 100 µAdc)

Symbol

Min

Max

Unit

V _(BR)

100

—

Vdc

Reverse Voltage Leakage Current

(V _R= 50 Vdc)

µAdc

I_R

I_R2

I_R3

V _F

—

1.0

3.0

100

(V _R= 100 Vdc)

(V _R= 50 Vdc,125°C)

Forward Voltage

Vdc

(I _F= 1.0 mAdc)

0.55

0.67

0.75

0.7

0.82

1.1

(I _F= 10 mAdc)

(I _F= 100 mAdc)

Reverse Recovery Time

(I _F= I _R= 10 mAdc) (Figure 1)

Capacitance(V_R=0V)

t_rr

—

4.0

—

1.5

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1/3

12 3

中文翻译

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