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LM8365BALMF27 PDF预览

LM8365BALMF27

更新时间： 2024-01-29 19:18:19
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德州仪器 - TI 光电二极管
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15页 881K
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Micropower Undervoltage-Sensing Circuit

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LM8365BALMF27 数据手册

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LM8365  
www.ti.com  
SNVS233B –MARCH 2003–REVISED APRIL 2013  
LM8365 Micropower Undervoltage Sensing Circuits with Programmable Output Delay  
Check for Samples: LM8365  
1
FEATURES  
DESCRIPTION  
The LM8365 series are micropower undervoltage  
sensing circuits that are ideal for use in battery  
powered microprocessor based systems, where  
extended battery life is a key requirement.  
2
•
Extremely Low Quiescent Current: 0.65μA, at  
VIN = 2.87V  
•
•
•
High Accuracy Threshold Voltage (±2.5%)  
Complementary or Open Drain Output  
A range of threshold voltages from 2.0V to 4.5V are  
available with an active low, open drain or CMOS,  
output. These devices feature a very low quiescent  
current of 0.65µA typical. The LM8365 series features  
a highly accurate voltage reference, a comparator  
with precise thresholds and built-in hystersis to  
prevent erratic reset operation, a time delayed output  
which can be programmed by the system designer,  
and specified Reset operation down to 1.0V with  
extremely low standby current.  
Programmable output delay by external  
Capacitor (100ms typ with 0.1μF)  
•
•
•
Input Voltage Range: 1V to 6V  
Surface Mount Package (5-Pin SOT-23)  
Pin for pin compatible with MC33465  
APPLICATIONS  
•
•
•
•
Low Battery Detection  
These devices are available in the space saving 5-  
Pin SOT-23 surface mount package. For additional  
undervoltage thresholds and output options, please  
contact Texas Instruments.  
Microprocessor Reset Controller  
Power Fail Indicator  
Battery Backup Detection  
Functional Diagrams  
INPUT  
INPUT  
R
R
D
D
RESET  
RESET  
-
-
+
+
V
REF  
V
REF  
C
GND  
D
GND  
C
D
Figure 1. CMOS Output  
Figure 2. Open Drain Output  
Connection Diagram  
1
5
RESET  
INPUT  
GND  
C
D
2
3
4
N/C  
Figure 3. 5-Pin SOT-23 (Top View)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2013, Texas Instruments Incorporated  
1234567...15

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LM8365BALMF27 替代型号

型号 品牌 替代类型 描述 数据表
LM8365BALMFX27/NOPB TI

完全替代

 Micropower Undervoltage-Sensing Circuit
LM8365BALMF27/NOPB TI

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