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LM8365BALMF22 PDF预览

LM8365BALMF22

更新时间: 2024-11-17 22:47:03
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美国国家半导体 - NSC /
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描述
Micropower Undervoltage Sensing Circuits with Programmable Output Delay

LM8365BALMF22 数据手册

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March 2003  
LM8365  
Micropower Undervoltage Sensing Circuits with  
Programmable Output Delay  
General Description  
Features  
n Extremely Low Quiescent Current: 0.65µA, at VIN  
2.87V  
=
The LM8365 series are micropower undervoltage sensing  
circuits that are ideal for use in battery powered micropro-  
cessor based systems, where extended battery life is a key  
requirement.  
n High Accuracy Threshold Voltage ( 2.5%)  
n Complementary or Open Drain Output  
n Programmable output delay by external Capacitor  
(100ms typ with 0.1µF)  
n Input Voltage Range: 1V to 6V  
n Surface Mount Package (5-Pin SOT23)  
n Pin for pin compatible with MC33465  
A range of threshold voltages from 2.0V to 4.5V are available  
with an active low, open drain or CMOS, output. These  
devices feature a very low quiescent current of 0.65µA typi-  
cal. The LM8365 series features a highly accurate voltage  
reference, a comparator with precise thresholds and built-in  
hysterisis to prevent erratic reset operation, a time delayed  
output which can be programmed by the system designer,  
and guaranteed Reset operation down to 1.0V with ex-  
tremely low standby current.  
Applications  
n Low Battery Detection  
n Microprocessor Reset Controller  
n Power Fail Indicator  
These devices are available in the space saving 5-Pin  
SOT23 surface mount package. For additional undervoltage  
thresholds and output options, please contact National  
Semiconductor.  
n Battery Backup Detection  
Functional Diagrams  
CMOS Output  
Open Drain Output  
20066013  
20066014  
Connection Diagram  
5-Pin SOT23  
20066012  
Top View  
© 2003 National Semiconductor Corporation  
DS200660  
www.national.com  

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