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LM833DG

更新时间： 2024-11-18 03:51:39
品牌 Logo 应用领域
安森美 - ONSEMI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
8页 100K
描述
Low Noise, Audio Dual Operational Amplifier

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中文翻译

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LM833DG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：ROHS COMPLIANT, SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：6.03Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：2
端子数量：8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：Operational Amplifier表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：3.9 mm
Base Number Matches：1

LM833DG 数据手册

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LM833  
Low Noise, Audio Dual  
Operational Amplifier  
The LM833 is a standard low−cost monolithic dual general−purpose  
operational amplifier employing Bipolar technology with innovative  
high−performance concepts for audio systems applications. With high  
frequency PNP transistors, the LM833 offers low voltage noise  
(4.5 nV/ Hz ), 15 MHz gain bandwidth product, 7.0 V/ms slew rate,  
0.3 mV input offset voltage with 2.0 mV/°C temperature coefficient of  
input offset voltage. The LM833 output stage exhibits no dead−band  
crossover distortion, large output voltage swing, excellent phase and  
gain margins, low open loop high frequency output impedance and  
symmetrical source/sink AC frequency response.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
LM833N  
AWL  
YYWWG  
PDIP−8  
N SUFFIX  
CASE 626  
For an improved performance dual/quad version, see the MC33079  
family.  
1
1
Features  
LM833N = Device Code  
Ǹ
• Low Voltage Noise: 4.5 nV/ Hz  
A
= Assembly Location  
• High Gain Bandwidth Product: 15 MHz  
• High Slew Rate: 7.0 V/ms  
• Low Input Offset Voltage: 0.3 mV  
• Low T.C. of Input Offset Voltage: 2.0 mV/°C  
• Low Distortion: 0.002%  
WL  
YY  
WW  
G
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
• Excellent Frequency Stability  
• Dual Supply Operation  
• Pb−Free Packages are Available  
LM833  
ALYW  
SOIC−8  
D SUFFIX  
CASE 751  
G
1
1
MAXIMUM RATINGS  
LM833 = Device Code  
Rating  
Supply Voltage (V to V  
Symbol  
Value  
Unit  
A
L
= Assembly Location  
= Wafer Lot  
)
EE  
V
S
+36  
V
CC  
Y
W
G
= Year  
= Work Week  
= Pb−Free Package  
Input Differential Voltage Range (Note 1)  
Input Voltage Range (Note 1)  
V
30  
15  
V
V
IDR  
V
IR  
Output Short Circuit Duration (Note 2)  
Operating Ambient Temperature Range  
Operating Junction Temperature  
Storage Temperature  
t
Indefinite  
−40 to +85  
+150  
SC  
PIN CONNECTIONS  
T
°C  
°C  
°C  
V
A
T
J
1
2
8
7
V
CC  
Output 1  
T
−60 to +150  
stg  
1
ESD Protection at any Pin  
− Human Body Model  
− Machine Model  
V
esd  
Output 2  
Inputs 2  
600  
200  
Inputs 1  
3
6
5
Maximum Power Dissipation (Notes 2 and 3)  
P
500  
mW  
D
2
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
4
V
EE  
(Top View)  
1. Either or both input voltages must not exceed the magnitude of V or V  
2. Power dissipation must be considered to ensure maximum junction  
.
CC  
EE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
temperature (T ) is not exceeded (see power dissipation performance  
J
characteristic).  
3. Maximum value at T ≤ 85°C.  
A
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
LM833/D  
 
12345678

中文翻译

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LM833DG 替代型号

型号 品牌 替代类型 描述 数据表
LM833DR2G ONSEMI

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 Low Noise, Audio Dual Operational Amplifier
LM833DR2 ONSEMI

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 Low Noise, Audio Dual Operational Amplifier
LM833D ONSEMI

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 DUAL OPERATIONAL AMPLIFIER

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