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LM6125H PDF预览

LM6125H

更新时间: 2024-11-26 23:16:47
品牌 Logo 应用领域
美国国家半导体 - NSC /
页数 文件大小 规格书
9页 265K
描述
High Speed Buffer

LM6125H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BCY包装说明:, CAN8,.2
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.88放大器类型:BUFFER
最大平均偏置电流 (IIB):7 µA标称带宽 (3dB):50 MHz
25C 时的最大偏置电流 (IIB):7 µA最大输入失调电压:50000 µV
JESD-30 代码:O-MBCY-W8JESD-609代码:e0
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:METAL封装等效代码:CAN8,.2
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified最小摆率:550 V/us
标称压摆率:800 V/us子类别:Buffer Amplifiers
最大压摆率:20 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

LM6125H 数据手册

 浏览型号LM6125H的Datasheet PDF文件第2页浏览型号LM6125H的Datasheet PDF文件第3页浏览型号LM6125H的Datasheet PDF文件第4页浏览型号LM6125H的Datasheet PDF文件第5页浏览型号LM6125H的Datasheet PDF文件第6页浏览型号LM6125H的Datasheet PDF文件第7页 
December 1994  
LM6125/LM6225/LM6325  
High Speed Buffer  
±
n High output current:  
300 mA  
General Description  
The LM6125 family of high speed unity gain buffers slew at  
800 V/µs and have a small signal bandwidth of 50 MHz while  
n Stable with large capacitive loads  
n Current and thermal limiting  
n Electronic shutdown  
n 5V to 15V operation guaranteed  
n Fully specified to drive 50lines  
±
driving a 50load. These buffers drive 300 mA peak and  
±
do not oscillate while driving large capacitive loads. The  
LM6125 contains unique features not found in power buffers;  
these include current limit, thermal shutdown, electronic  
shutdown, and an error flag that warns of fault conditions.  
Applications  
n Line Driving  
n Radar  
These buffers are built with National’s VIP (Vertically Inte-  
grated PNP) process which provides fast PNP transistors  
that are true complements to the already fast NPN devices.  
This advanced junction-isolated process delivers high speed  
performance without the need for complex and expensive di-  
electric isolation.  
n Sonar  
Features  
n High slew rate: 800 V/µs  
Simplified Schematic and Block Diagram  
DS009222-1  
DS009222-2  
Numbers in () are for 14–pin N DIP.  
VIP is a trademark of National Semiconductor Corporation.  
© 1999 National Semiconductor Corporation  
DS009222  
www.national.com  

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