LM5D70N03 PDF预览

LM5D70N03

更新时间: 2025-07-27 18:28:03
品牌 Logo 应用领域
雷卯电子 - LEIDITECH /
页数 文件大小 规格书
5页 5235K
描述
Package : DFN5X6-8; Vdss Min(V) Drain-Source voltage : 30; Drain Current ID(A)25℃ : 70; Vgs(V) : 20; Vth Typ : 1.6; Ron(10V) (mΩ)Typ : 3.5; Ron(10V) (mΩ) Max : 5.5; Ron(4.5V) (mΩ)Typ : 6.5; Ron(4.5V) (mΩ)Max : 8.5;

LM5D70N03 数据手册

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LM5D70N03  
Description  
The LM5D70N03 uses advanced trench technology  
to provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 4.5V. This  
device is suitable for use as a  
Battery protection or in other Switching application.  
General Features  
VDS = 30V ID =70A  
RDS(ON) < 5.5mΩ @ VGS=10V  
Application  
Battery protection  
Load switch  
Uninterruptible power supply  
Package Marking and Ordering Information  
Device  
Device Marking  
Device Package  
Reel Size  
Tape width  
Quantity  
LM5D70N03  
AP70N03NF  
DFN5X6-8  
-
-
5000 units  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Symbol  
VDS  
Parameter  
Rating  
30  
Units  
Drain-Source Voltage  
V
V
A
A
VGS  
Gate-Source Voltage  
±20  
70  
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
ID@TC=25  
51  
ID@TC=100℃  
ID@TA=25℃  
Continuous Drain Current, VGS @ 10V1  
15  
A
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
12  
160  
115.2  
48  
A
A
ID@TA=70℃  
IDM  
EAS  
Single Pulse Avalanche Energy3  
mJ  
A
IAS  
Avalanche Current  
Total Power Dissipation4  
Total Power Dissipation4  
59  
W
W
PD@TC=25℃  
2
PD@TA=25℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
-55 to 150  
-55 to 150  
62  
RθJA  
RθJC  
/W  
/W  
2.1  
Rev : 22.11.2021  
1 / 5  
www.leiditech.com  

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