SM5817 THRU SM5819
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
CURRENT: 1.0 A
V O L T A G E R A NG E : 2 0 --- 4 0 V
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
DO-213AB
Low forward voltage drop,low switching losses
High surge capability
SOLDERABLE ENDS
+0
-0.20
D2=D1
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarityprotection applications
D2
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
0.5± 0.1
0.5± 0.1
Case:JEDEC DO--213AB,molded plastic
Terminals: Solderable per
4.9± 0.2
MIL- STD-202,method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.0046 ounces,0.116 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SM5817
20
SM5818
30
SM5819
40
UNITS
MDD Catalog
Number
Maximum recurrent peak reverse voltage
Maximum RMS v oltage
V
V
V
VRRM
VRMS
VDC
14
21
28
Maximum DC blocking voltage
Maximum average forw ard rectified current
@TA=90
20
30
40
1.0
25
A
IF(AV)
IFSM
VF
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
A
0.45
0.75
0.55
0.875
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
0.60
0.90
V
@ 3.0A
Maximum reverse current
@TA=25
@TA=100
1.0
mA
IR
at rated DC blocking voltage
10.0
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
110
CJ
pF
80
Rθ
/W
JA
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient,vertical PC board mounting,0.5"(12.7mm)lead length.
MDD ELECTRONIC