Datasheet > LM5113

LM5113

更新时间： 2024-09-29 11:58:19

品牌	Logo	应用领域
德州仪器 - TI		驱动器栅极栅极驱动
页数	文件大小	规格书
15页	1866K
描述
5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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LM5113 数据手册

January 6, 2012

LM5113

5A, 100V Half-Bridge Gate Driver for Enhancement Mode

GaN FETs

General Description

Features

The LM5113 is designed to drive both the high-side and the

low-side enhancement mode Gallium Nitride (GaN) FETs in

a synchronous buck or a half bridge configuration. The float-

ing high-side driver is capable of driving a high-side enhance-

ment mode GaN FET operating up to 100V. The high-side

bias voltage is generated using a bootstrap technique and is

internally clamped at 5.2V, which prevents the gate voltage

from exceeding the maximum gate-source voltage rating of

enhancement mode GaN FETs. The inputs of the LM5113 are

TTL logic compatible, and can withstand input voltages up to

14V regardless of the VDD voltage. The LM5113 has split

gate outputs, providing flexibility to adjust the turn-on and

turn-off strength independently.

Independent high-side and low-side TTL logic inputs

■

1.2A/5A peak source/sink current

High-side floating bias voltage rail operates up to 100VDC

Internal bootstrap supply voltage clamping

Split outputs for adjustable turn-on/turn-off strength

■

0.6Ω /2.1Ω pull-down/pull-up resistance

Fast propagation times (28ns typical)

Excellent propagation delay matching (1.5ns typical)

Supply rail under-voltage lockout

■

Low power consumption

In addition, the strong sink capability of the LM5113 maintains

the gate in the low state, preventing unintended turn-on during

switching. The LM5113 can operate up to several MHz. The

LM5113 is available in a standard LLP-10 pin package and a

12-bump micro SMD package. The LLP-10 pin package con-

tains an exposed pad to aid power dissipation. The micro

SMD package offers a compact footprint and minimized pack-

age inductance.

Typical Applications

Current Fed Push-Pull converters

■

Half and Full-Bridge converters

Synchronous Buck converters

Two-switch Forward converters

Forward with Active Clamp converters

■

Packages

LLP-10 (4 mm x 4 mm)

■

micro SMD (2 mm x 2 mm)

Typical Application

30162903

FIGURE 1.

301629 SNVS725E

www.ti.com

12 3 4 5 6 7...15

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LM5113 替代型号

型号	品牌	替代类型	描述	数据表
UCC27611	TI	功能相似	4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver
LM5114	TI	功能相似	Single 7.6A Peak Current Low-Side Gate Driver
UCC27511	TI	功能相似	Single Channel High-Speed, Low-Side Gate Driver

与LM5113相关器件

型号	品牌	获取价格	描述	数据表
LM5113_1211	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113_14	TI	获取价格	5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113-Q1	TI	获取价格	适用于 GaNFET 的汽车类 1.2A/5A、100V 半桥栅极驱动器
LM5113QDPRRQ1	TI	获取价格	适用于 GaNFET 的汽车类 1.2A/5A、100V 半桥栅极驱动器 \| DPR \|
LM5113SD	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113SD/NOPB	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113SDE	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113SDE/NOPB	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113SDX	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs
LM5113SDX/NOPB	TI	获取价格	LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

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