Datasheet > LM329_08

LM329_08

更新时间： 2024-09-23 04:18:55

品牌	Logo	应用领域
美国国家半导体 - NSC		/
页数	文件大小	规格书
8页	197K
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Precision Reference

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LM329_08 数据手册

January 17, 2008

LM329

Precision Reference

General Description

fies biasing and the wide operating current allows the re-

placement of many zener types.

The LM329 is a precision multi-current temperature-compen-

sated 6.9V zener reference with dynamic impedance a factor

of 10 to 100 less than discrete diodes. Constructed in a single

silicon chip, the LM329 uses active circuitry to buffer the in-

ternal zener allowing the device to operate over a 0.5 mA to

15 mA range with virtually no change in performance. The

LM329 is available with a temperature coefficients of 0.01%/

°C. This reference also has excellent long term stability and

low noise.

The LM329 for operation over 0°C to 70°C is available in a

TO-92 epoxy package.

Features

0.6 mA to 15 mA operating current

■

0.8Ω dynamic impedance at any current

Available with temperature coefficient of 0.01%/°C

■

7μV wideband noise

5% initial tolerance

0.002% long term stability

Low cost

A new subsurface breakdown zener used in the LM329 gives

lower noise and better long-term stability than conventional

IC zeners. Further the zener and temperature compensating

transistor are made by a planar process so they are immune

to problems that plague ordinary zeners. For example, there

is virtually no voltage shift in zener voltage due to temperature

cycling and the device is insensitive to stress on the leads.

Subsurface zener

The LM329 can be used in place of conventional zeners with

improved performance. The low dynamic impedance simpli-

Connection Diagram

Typical Applications

Plastic Package (TO-92)

Simple Reference

571404

Bottom View

Order Number LM329DZ

See NS Package Z03A

571401

5714

www.national.com

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