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LM3146

更新时间: 2024-11-20 22:47:07
品牌 Logo 应用领域
美国国家半导体 - NSC 晶体晶体管
页数 文件大小 规格书
6页 154K
描述
LM3146 High Voltage Transistor Array

LM3146 数据手册

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February 1995  
LM3146 High Voltage Transistor Array  
General Description  
Features  
Y
High voltage matched pairs of transistors, V  
g
matched  
1 mA  
The LM3146 consists of five high voltage general purpose  
silicon NPN transistors on a common monolithic substrate.  
Two of the transistors are internally connected to form a  
differentially-connected pair. The transistors are well suited  
to a wide variety of applications in low power system in the  
dc through VHF range. They may be used as discrete tran-  
sistors in conventional circuits however, in addition, they  
provide the very significant inherent integrated circuit ad-  
vantages of close electrical and thermal matching. The  
LM3146 is supplied in a 14-lead molded dual-in-line pack-  
age for applications requiring only a limited temperature  
range.  
BE  
e
5 mV, input offset current 2 mA max at I  
C
Y
Y
Y
Y
Five general purpose monolithic transistors  
Operation from dc to 120 MHz  
Wide operating current range  
Low noise figure  
3.2 dB typ at 1 kHz  
Applications  
Y
General use in all types of signal processing systems  
operating anywhere in the frequency range from dc to  
VHF  
Y
Y
Custom designed differential amplifiers  
Temperature compensated amplifiers  
Connection Diagram  
Dual-In-Line and Small Outline Packages  
TL/H/7959–1  
Top View  
Order Number LM3146M or LM3146N  
See NS Package Number M14A or N14A  
C
1995 National Semiconductor Corporation  
TL/H/7959  
RRD-B30M115/Printed in U. S. A.  

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