Datasheet > LM313

LM313

更新时间： 2024-11-24 22:47:07

品牌	Logo	应用领域
美国国家半导体 - NSC		二极管
页数	文件大小	规格书
4页	129K
描述
Reference Diode

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LM313 数据手册

December 1994

LM113/LM313 Reference Diode

General Description

The LM113/LM313 are temperature compensated, low volt-

Dynamic impedance of 0.3X from 500 mA to 20 mA

age reference diodes. They feature extremely-tight regula-

tion over a wide range of operating currents in addition to an

unusually-low breakdown voltage and good temperature

stability.

Temperature stability typically 1% over 55 C to 125 C

range (LM113), 0 C to 70 C (LM313)

Tight tolerance: 5%, 2% or 1%

The characteristics of this reference recommend it for use in

bias-regulation circuitry, in low-voltage power supplies or in

battery powered equipment. The fact that the breakdown

voltage is equal to a physical property of siliconÐthe ener-

gy-band gap voltageÐmakes it useful for many tempera-

ture-compensation and temperature-measurement func-

tions.

The diodes are synthesized using transistors and resistors

in a monolithic integrated circuit. As such, they have the

same low noise and long term stability as modern IC op

amps. Further, output voltage of the reference depends only

on highly-predictable properties of components in the IC; so

they can be manufactured and supplied to tight tolerances.

Features

Low breakdown voltage: 1.220V

Schematic and Connection Diagrams

Metal Can Package

Order Number

LM113H, LM113H/883,

LM113-1H, LM113-1H/883,

LM113-2H, LM113-2H/883,

or LM313H

See NS Package Number H02A

TL/H/5713–1

Typical Applications

Low Voltage Regulator

Level Detector for Photodiode

Solid tantalum.

TL/H/5713–2

1995 National Semiconductor Corporation

TL/H/5713

RRD-B30M115/Printed in U. S. A.

12 3 4

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