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LM1MA141WKT1G PDF预览

LM1MA141WKT1G

更新时间: 2024-10-02 11:33:55
品牌 Logo 应用领域
乐山 - LRC 二极管开关
页数 文件大小 规格书
4页 101K
描述
Common Cathode Silicon Dual Switching Diode

LM1MA141WKT1G 数据手册

 浏览型号LM1MA141WKT1G的Datasheet PDF文件第2页浏览型号LM1MA141WKT1G的Datasheet PDF文件第3页浏览型号LM1MA141WKT1G的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
Common Cathode Silicon  
Dual Switching Diode  
LM1MA141WKT1  
LM1MA142WKT1  
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for  
use in ultra high speed switching applications. This device is housed in the  
SC-70 package which is designed for low power surface mount applications.  
• Fast trr, < 3.0 ns  
SC–70/SOT–323 PACKAGE  
COMMON CATHODE  
DUAL SWITCHING DIODE  
40/80 V–100 mA  
SURFACE MOUNT  
• Low CD, < 2.0 pF  
• Pb-Free package is available  
3
• Available in 8 mm Tape and Reel  
Use LM1MA141/2WKT1 to order the 7 inch/3000 unit reel.  
Use LM1MA141/2WKT3 to order the 13 inch/10,000 unit reel.  
1
2
CASE 419–04, STYLE 5  
SOT–323 /SC – 70  
MAXIMUM RATINGS (TA = 25°C)  
Rating  
Reverse Voltage  
Symbol Value  
Unit  
CATHODE  
3
LM1MA141WKT1  
LM1MA142WKT1  
VR  
VRM  
IF  
40  
80  
Vdc  
Peak Reverse Voltage  
Forward Current  
LM1MA141WKT1  
40  
Vdc  
LM1MA142WKT1  
Single  
80  
1
2
ANODE  
100  
150  
225  
340  
500  
750  
mAdc  
mAdc  
mAdc  
Dual  
Peak Forward Current  
Peak Forward Surge Current  
Single  
IFM  
Marking Symbol  
MTX  
Type No.141WK142WK  
Symbol MT MU  
Dual  
(1)  
Single  
IFSM  
The “X” represents a smaller alpha digit Date  
Code. The Date Code indicates the actual month  
in which the part was manufactured.  
Dual  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
PD  
Max  
150  
150  
Unit  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
Tstg  
–55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (TA= 25°C)  
Characteristic  
Symbol  
Condition  
Min  
Max  
0.1  
0.1  
1.2  
Unit  
Reverse Voltage Leakage Current LM1MA141WKT1  
LM1MA142WKT1  
IR  
VR = 35 V  
VR = 75 V  
µAdc  
Forward Voltage  
VF  
VR  
IF = 100 mA  
IR = 100 µA  
Vdc  
Vdc  
Reverse Breakdown Voltage  
LM1MA141WKT1  
LM1MA142WKT1  
40  
80  
Diode Capacitance  
Reverse Recovery  
CD  
VR=0, f=1.0 MHz  
IF=10mA,VR=6.0V  
RL=100,Irr=0.1 IR  
2.0  
3.0  
pF  
ns  
(2)  
Time  
trr  
1. t = 1 SEC  
2. trr Test Circuit  
LM1MA141/2WKT1-1/4  

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