Datasheet > LM1MA141WA

LM1MA141WA

更新时间： 2024-11-26 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		二极管开关
页数	文件大小	规格书
3页	316K
描述
Common Anode Silicon Dual Switching Diode

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LM1MA141WA 数据手册

WILLAS

LM1MA141WA

LM1MA142WA

Common Anode Silicon

Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use

in ultra high speed switching applications. This device is housed in the SOT–323

package which is designed for low power surface mount applications.

SOT-323 PACKAGE

COMMON ANODE

DUAL SWITCHING DIODE

40/80 V-100 mA

• Fast t_rr, < 10 ns

• Low C , < 15 pF

z We declare that the material of product

compliance with RoHS requirements.

SURFACE MOUNT

Moisture Sensitivity Level 1

DEVICE MARKING AND ORDERING INFORMATION

Device

Package

SOT-323

Shipping

LM1MA141WA

3000/Tape&Reel

LM1MA142WA

SOT–323 /SC – 70

Pb-Free package is available

RoHS product for packing code suffix ”G”

ANODE

Halogen free product for packing code suffix “H”

DEVICE MARKING

LM1MA141WA = MN

LM1MA142WA =MO

MAXIMUM RATINGS (T_A= 25°C)

CATHODE

Rating

Symbol Value

Unit

Reverse Voltage

LM1MA141WA

V_dc

Marking Symbol

LM1MA142WA

LM1MA141WA

LM1MA142WA

Single

MN^X

Type No.141WA142WA

Symbol MN MO

Peak Reverse Voltage

Forward Current

V_RM

I_F

V_dc

The “X” represents a smaller alpha digit Date

Code. The Date Code indicates the actual month

in which the part was manufactured.

100

150

225

340

500

750

mAdc

Dual

Peak Forward Current

Peak Forward Surge Current

Single

I_FM

Dual

(1)

Single

I_FSM

Dual

THERMAL CHARACTERISTICS

Rating

Symbol

P_D

Max

150

Unit

°C

Power Dissipation

Junction Temperature

Storage Temperature

T_J

T_stg

–55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C)

Characteristic

Symbol

Condition

Min

—

Max

0.1

1.2

—

Unit

Reverse Voltage Leakage Current LM1MA141WA

LM1MA142WA

I_R

V_R= 35 V

µAdc

V = 75 V

—

Forward Voltage

V_F

I_F= 100 mA

—

Vdc

Reverse Breakdown Voltage

LM1MA141WA

LM1MA142WA

I_R= 100 µA

—

Diode Capacitance

Reverse Recovery

C_D

V_R=0, f=1.0 MHz

I_F=10mA,V_R=6.0V

R_L=100Ω,I_rr=0.1 I_R

(2)

Time

t_rr

—

1. t = 1 SEC

2. t_rrTest Circuit

2012-12

WILLAS ELECTRONIC CORP.

12 3

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