LM1MA141WAT1G, S-LM1MA141WAT1G
LM1MA142WAT1G, S-LM1MA142WAT1G
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use
in ultra high speed switching applications. This device is housed in the SC–70
package which is designed for low power surface mount applications.
SC-70/SOT-323 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
40/80 V-100 mA
z
• Fast trr, < 10 ns
• Low C , < 15 pF
z
D
SURFACE MOUNT
z We declare that the material of product
compliance with RoHS requirements.
3
z
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
DEVICE MARKING AND ORDERING INFORMATION
2
CASE 419–04, STYLE 4
SOT–323 /SC – 70
Device
Package
Shipping
LM1MA141WAT1G
SOT-323/SC-70
3000/Tape&Reel
S-LM1MA141WAT1G
ANODE
3
LM1MA141KWA3G
S-LM1MA141WAT3G
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
LM1MA142WAT1G
S-LM1MA142WAT1G
LM1MA142WAT3G
1
2
S-LM1MA142WAT3G
CATHODE
DEVICE MARKING
LM1MA141WAT1G = MN LM1MA142WAT1G=MO
Marking Symbol
MNX
Type No.141WA142WA
Symbol MN MO
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Symbol Value
Unit
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
LM1MA141WAT1G
LM1MA142WAT1G
V
R
40
80
Vdc
Peak Reverse Voltage
Forward Current
LM1MA141WAT1G VRM
LM1MA142WAT1G
40
Vdc
80
Single
Dual
IF
100
150
225
340
500
750
mAdc
mAdc
mAdc
Peak Forward Current
Peak Forward Surge Current
Single
Dual
IFM
(1)
Single
Dual
IFSM
THERMAL CHARACTERISTICS
Rating
Symbol
PD
Max
150
150
Unit
mW
°C
Power Dissipation
Junction Temperature
Storage Temperature
TJ
Tstg
–55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
—
Max
0.1
0.1
1.2
—
Unit
Reverse Voltage Leakage Current LM1MA141WAT1G IR
LM1MA142WAT1G
VR = 35 V
µAdc
V = 75 V
R
—
Forward Voltage
VF
IF = 100 mA
—
Vdc
Vdc
Reverse Breakdown Voltage
LM1MA141WAT1G V
IR = 100 µA
40
80
—
R
LM1MA142WAT1G
—
Diode Capacitance
Reverse Recovery
CD
VR=0, f=1.0 MHz
IF=10mA,VR=6.0V
RL=100Ω,Irr=0.1 IR
15
pF
ns
(2)
Time
trr
—
10
1. t = 1 SEC 2. trr Test Circuit
1/3
Rev :01.06.2017
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