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LM135H-MIL/NOPB PDF预览

LM135H-MIL/NOPB

更新时间: 2024-09-20 13:09:19
品牌 Logo 应用领域
德州仪器 - TI 传感器温度传感器
页数 文件大小 规格书
24页 1266K
描述
ANALOG TEMP SENSOR-VOLTAGE, 0.002V, 1Cel, ROUND, THROUGH HOLE MOUNT

LM135H-MIL/NOPB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.73
最大精度(摄氏度):1 Cel主体高度:2.34 mm
主体长度或直径:4.73 mm外壳:METAL
安装特点:THROUGH HOLE MOUNT最大工作电流:5 mA
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电压:0.002 V封装形状/形式:ROUND
传感器/换能器类型:TEMPERATURE SENSOR,ANALOG,VOLTAGE OUTPUT表面贴装:NO
端接类型:SOLDERBase Number Matches:1

LM135H-MIL/NOPB 数据手册

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LM135, LM135A, LM235, LM235A, LM335, LM335A  
www.ti.com  
SNIS160D MAY 1999REVISED MARCH 2013  
LM135/LM235/LM335, LM135A/LM235A/LM335A Precision Temperature Sensors  
Check for Samples: LM135, LM135A, LM235, LM235A, LM335, LM335A  
1
FEATURES  
Easily Calibrated  
Wide Operating Temperature Range  
200°C Overrange  
2
Directly Calibrated in °Kelvin  
1°C Initial Accuracy Available  
Operates from 400 μA to 5 mA  
Less than 1Ω Dynamic Impedance  
Low Cost  
DESCRIPTION  
The LM135 series are precision, easily-calibrated, integrated circuit temperature sensors. Operating as a 2-  
terminal zener, the LM135 has a breakdown voltage directly proportional to absolute temperature at +10 mV/°K.  
With less than 1Ω dynamic impedance the device operates over a current range of 400 μA to 5 mA with virtually  
no change in performance. When calibrated at 25°C the LM135 has typically less than 1°C error over a 100°C  
temperature range. Unlike other sensors the LM135 has a linear output.  
Applications for the LM135 include almost any type of temperature sensing over a 55°C to 150°C temperature  
range. The low impedance and linear output make interfacing to readout or control circuitry especially easy.  
The LM135 operates over a 55°C to 150°C temperature range while the LM235 operates over a 40°C to  
125°C temperature range. The LM335 operates from 40°C to 100°C. The LM135/LM235/LM335 are available  
packaged in hermetic TO transistor packages while the LM335 is also available in plastic TO-92 packages.  
Schematic Diagram  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2013, Texas Instruments Incorporated  

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