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LM111J-8LQMLV PDF预览

LM111J-8LQMLV

更新时间: 2023-09-03 20:29:09
品牌 Logo 应用领域
德州仪器 - TI 放大器比较器
页数 文件大小 规格书
47页 1410K
描述
电压比较器 | NAB | 8 | -55 to 125

LM111J-8LQMLV 技术参数

生命周期:Active零件包装代码:DIP
包装说明:DIP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.26
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:588472Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:DIP254P762X508-8Samacsys Released Date:2017-01-11 19:09:53
Is Samacsys:N放大器类型:COMPARATOR
最大平均偏置电流 (IIB):0.1 µA25C 时的最大偏置电流 (IIB):0.1 µA
最大输入失调电压:4000 µVJESD-30 代码:R-GDIP-T8
长度:10.16 mm湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
输出类型:OPEN-COLLECTOR封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
包装方法:TUBE峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
标称响应时间:200 ns筛选级别:MIL-PRF-38535 Class V
座面最大高度:5.08 mm子类别:Comparator
最大压摆率:6 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
总剂量:50k Rad(Si) V宽度:7.62 mm
Base Number Matches:1

LM111J-8LQMLV 数据手册

 浏览型号LM111J-8LQMLV的Datasheet PDF文件第2页浏览型号LM111J-8LQMLV的Datasheet PDF文件第3页浏览型号LM111J-8LQMLV的Datasheet PDF文件第4页浏览型号LM111J-8LQMLV的Datasheet PDF文件第5页浏览型号LM111J-8LQMLV的Datasheet PDF文件第6页浏览型号LM111J-8LQMLV的Datasheet PDF文件第7页 
LM111QML  
www.ti.com  
SNOSAJ4C OCTOBER 2005REVISED MARCH 2013  
LM111QML Voltage Comparator  
Check for Samples: LM111QML  
1
FEATURES  
DESCRIPTION  
The LM111 is a voltage comparator that has input  
currents nearly a thousand times lower than devices  
such as the LM106 or LM710. It is also designed to  
operate over a wider range of supply voltages: from  
standard ±15V op amp supplies down to the single  
5V supply used for IC logic. The output is compatible  
with RTL, DTL and TTL as well as MOS circuits.  
Further, it can drive lamps or relays, switching  
voltages up to 50V at currents as high as 50 mA.  
2
Available with radiation ensured  
High Dose Rate 50 krad(Si)  
Low Dose and ELDRS Free 100 krad(Si)  
Operates from single 5V supply  
Input current: 200 nA max. over temperature  
Offset current: 20 nA max. over temperature  
Differential input voltage range: ±30V  
Power consumption: 135 mW at ±15V  
Power supply voltage, single 5V to ±15V  
Offset voltage null capability  
Both the inputs and the output of the LM111 can be  
isolated from system ground, and the output can  
drive loads referred to ground, the positive supply or  
the negative supply. Offset balancing and strobe  
capability are provided and outputs can be wire  
OR'ed. Although slower than the LM106 and LM710  
(200 ns response time vs 40 ns) the device is also  
much less prone to spurious oscillations. The LM111  
has the same pin configuration as the LM106 and  
LM710.  
Strobe capability  
Connection Diagrams  
TO-99 Package  
Note: Pin 4 connected to case  
Figure 1. Top View  
Package Number LMC0008C  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2005–2013, Texas Instruments Incorporated  

LM111J-8LQMLV 替代型号

型号 品牌 替代类型 描述 数据表
5962L0052401VPA TI

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电压比较器 | NAB | 8 | -55 to 125

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