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LM111J-8LQMLV PDF预览

LM111J-8LQMLV

更新时间: 2024-11-09 05:41:59
品牌 Logo 应用领域
美国国家半导体 - NSC 比较器放大器放大器电路
页数 文件大小 规格书
34页 1006K
描述
Voltage Comparator

LM111J-8LQMLV 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.21Is Samacsys:N
放大器类型:COMPARATOR最大平均偏置电流 (IIB):0.15 µA
25C 时的最大偏置电流 (IIB):0.1 µA最大输入失调电压:4000 µV
JESD-30 代码:R-GDIP-T8JESD-609代码:e0
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C输出类型:OPEN-COLLECTOR
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
电源:+-15 V认证状态:Not Qualified
标称响应时间:200 ns筛选级别:MIL-PRF-38535 Class V
座面最大高度:5.08 mm子类别:Comparators
最大压摆率:6 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40总剂量:50k Rad(Si) V
宽度:7.62 mmBase Number Matches:1

LM111J-8LQMLV 数据手册

 浏览型号LM111J-8LQMLV的Datasheet PDF文件第2页浏览型号LM111J-8LQMLV的Datasheet PDF文件第3页浏览型号LM111J-8LQMLV的Datasheet PDF文件第4页浏览型号LM111J-8LQMLV的Datasheet PDF文件第5页浏览型号LM111J-8LQMLV的Datasheet PDF文件第6页浏览型号LM111J-8LQMLV的Datasheet PDF文件第7页 
June 30, 2008  
LM111QML  
Voltage Comparator  
General Description  
The LM111 is a voltage comparator that has input currents  
nearly a thousand times lower than devices such as the  
LM106 or LM710. It is also designed to operate over a wider  
range of supply voltages: from standard ±15V op amp sup-  
plies down to the single 5V supply used for IC logic. The  
output is compatible with RTL, DTL and TTL as well as MOS  
circuits. Further, it can drive lamps or relays, switching volt-  
ages up to 50V at currents as high as 50 mA.  
Features  
Available with radiation guaranteed  
High Dose Rate  
Low Dose and ELDRS Free  
50 krad(Si)  
100 krad(Si)  
Operates from single 5V supply  
Input current: 200 nA max. over temperature  
Offset current: 20 nA max. over temperature  
Differential input voltage range: ±30V  
Power consumption: 135 mW at ±15V  
Power supply voltage, single 5V to ±15V  
Offset voltage null capability  
Both the inputs and the output of the LM111 can be isolated  
from system ground, and the output can drive loads referred  
to ground, the positive supply or the negative supply. Offset  
balancing and strobe capability are provided and outputs can  
be wire OR'ed. Although slower than the LM106 and LM710  
(200 ns response time vs 40 ns) the device is also much less  
prone to spurious oscillations. The LM111 has the same pin  
configuration as the LM106 and LM710.  
Strobe capability  
Ordering Information  
NS PART NUMBER  
LM111E-SMD  
LM111H-SMD  
LM111J-8-SMD  
LM111WG-SMD  
LM111E/883  
SMD PART NUMBER  
5962-8687701Q2A  
5962-8687701QGA  
5962-8687701QPA  
5962-8687701QZA  
NS PACKAGE NUMBER  
PACKAGE DESCRIPTION  
20LD Leadless Chip Carrier  
8LD TO-99 Metal Can  
8LD CERDIP  
E20A  
H08C  
J08A  
WG10A  
E20A  
10LD Ceramic SOIC  
20LD Leadless Chip Carrier  
8LD TO-99 Metal Can  
8LD CERDIP  
LM111H/883  
H08C  
J08A  
LM111J-8/883  
LM111J/883  
J14A  
14LD CERDIP  
LM111W/883  
W10A  
WG10A  
H08C  
10LD CERPACK  
LM111WG/883  
10LD Ceramic SOIC  
8LD TO-99 Metal Can  
LM111HLQMLV (Note 12)  
High Dose Rate ONLY  
5962L0052401VGA  
50k rd(Si)  
LM111J-8LQMLV (Note 12)  
High Dose Rate ONLY  
5962L0052401VPA  
50k rd(Si)  
J08A  
WG10A  
W10A  
H08C  
8LD CERDIP  
LM111WGLQMLV (Note 12)  
High Dose Rate ONLY  
5962L0052401VZA  
50k rd(Si)  
10LD Ceramic SOIC  
10LD CERPACK  
8LD TO-99 Metal Can  
8LD CERDIP  
LM111WLQMLV (Note 12)  
High Dose Rate ONLY  
5962L0052401VHA  
50k rd(Si)  
LM111HRLQMLV (Note 14)  
ELDRS Free ONLY  
5962R0052402VGA  
100k rd(Si)  
LM111J-8RLQMLV (Note 14)  
ELDRS Free ONLY  
5962R0052402VPA  
100k rd(Si)  
J08A  
LM111WGRLQMLV (Note 14)  
ELDRS Free ONLY  
5962R0052402VZA  
100k rd(Si)  
WG10A  
W10A  
10LD Ceramic SOIC  
10LD CERPACK  
LM111WRLQMLV (Note 14)  
ELDRS Free ONLY  
5962R0052402VHA  
100k rd(Si)  
© 2008 National Semiconductor Corporation  
201285  
www.national.com  

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