LLSD103C

更新时间： 2024-09-16 05:41:59

品牌	Logo	应用领域
商朗 - LUNSURE		二极管开关
页数	文件大小	规格书
2页	326K
描述
Schottky barrier switching diode

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中文翻译

获取价格

数据手册

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LLSD103C 数据手册

LLSD103A

THRU

LLSD103C

Shanghai Lunsure Electronic

Technology Co.,Ltd

Fax:0086-21-57152769

Features

Low Reverse Recovery Time

Schottky Barrier

Switching Diode

Low Reverse Capacitance

Low Forward Voltage Drop

l Guard Ring Construction for Transient Protection

Mechanical Data

l Case: MiniMELF, Glass

MINIMELF

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: Indicated by Cathode Band

l Weight: 0.05 grams ( approx.)

Cathode Mark

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol LLSD103A LLSD103B LLSD103C

V^RRM

VRWM

V^R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

40V

28V

30V

20V

14V

V_R(RMS)

I^FM

RMS Reverse Voltage

21V

Forward Continuous Current(Note1)

350mA

Maximum Single cycle surge 60Hz

sine wave

I^FSM

15A

DIMENSION

Power Dissipation(Note 1)

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

P_d

400mW

250K/W

-55 to 150 ^oC

DIM

INCHES

MIN

NOTE

MAX

.142

.016

.059

MIN

3.40

0.20

1.40

MAX

3.60

0.40

1.50

.134

.008

.055

Tj, T^STG

Electrical Characteristics @ 25^oC Unless Otherwise Specified

SUGGESTED SOLDER

PAD LAYOUT

Charateristic

Peak LLSD103A

Reverse LLSD103B

Current LLSD103C

Symbol Min Typ Max

Test Cond.

V^R=30V

0.105

5.0uA

IRM

----- -----

VR=20V

VR=10V

0.075”

Maximum Forward

Voltage Drop

V_FM

----- ----- 0.37V I_F=20mA

0.60V IF=200mA

Junction Capacitance

t^rr

----- 50

----- 10

VR=0V, f=1.0MHz

0.030”

IF=IR=50mA to 200mA,

recover to 0.1 I^R

Reverse Recovery Time

Note: 1. Valid provided that electrodes are kept at ambient temperature

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中文翻译

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