LLSD101B

更新时间： 2024-11-05 05:41:59

品牌	Logo	应用领域
商朗 - LUNSURE		二极管开关
页数	文件大小	规格书
2页	323K
描述
schottky barrier switching diode

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中文翻译

获取价格

数据手册

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LLSD101B 数据手册

LLSD101A

THRU

LLSD101C

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

Features

Low Reverse Recovery Time

Schottky Barrier

Switching Diode

Low Reverse Capacitance

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Mechanical Data

l Case: MiniMELF, Glass

MINIMELF

l Terminals: Solderable per MIL -STD-202, Method 208

l Polarity: Indicated by Cathode Band

l Weight: 0.05 grams ( approx.)

Cathode Mark

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol LLSD101A LLSD101B LLSD101C

VRRM

VRWM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

60V

42V

50V

40V

28V

RMS Reverse Voltage

V^R(RMS)

I_FM

35V

Forward Continuous Current(Note 1)

15mA

Non-Repetitive Peak @ t<=1.0s

Forward Surge Current @ t=10us

50mA

2.0A

I^FSM

DIMENSION

Power Dissipation(Note 1)

Thermal Resistance(Note 1)

400mW

375K/W

-55 to 150^oC

DIM

INCHES

MIN

NOTE

MAX

.142

.016

.059

MIN

3.40

.20

MAX

3.60

.40

.134

.008

.055

Operation & Storage Temp. Range Tj, T^STG

Electrical Characteristics @ 25^oC Unless Otherwise Specified

1.40

1.50

Charateristic

Symbol Min

Max Unit

Test Cond.

V_R=50V

SUGGESTED SOLDER

PAD LAYOUT

Peak

LLSD101A

Reverse LLSD101B

I_RM

200

nA V_R=40V

V_R=30V

-----

0.105

Current

LLSD101C

LLSD101A

LLSD101B

LLSD101C

0.41

0.40

0.39

1.00

0.95

0.90

2.0

I_F=1.0mA

Forward

V_FM

I_F=1.0mA

I_F=15mA

-----

0.075”

Volt. Drop LLSD101A

LLSD101B

LLSD101C

Junction

LLSD101A

Capacitance LLSD101B

LLSD101C

0.030”

2.1

pF V_R=0V, f=1.0MHz

I_F=I_R=5mA,

-----

2.2

t_rr

Reverse Recovery Time

1.0

-----

recover to 0.1 I _R

Note: 1. Valid provided that electrodes are kept at ambient temperature

www.cnelectr.com

中文翻译

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