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LL4148 PDF预览

LL4148

更新时间: 2024-11-27 22:31:15
品牌 Logo 应用领域
智威 - ZOWIE 二极管局域网
页数 文件大小 规格书
2页 46K
描述
SILICON EPITAXIAL PLANAR DIODES

LL4148 数据手册

 浏览型号LL4148的Datasheet PDF文件第2页 
LL4148, LL4448  
SILICON EPITAXIAL PLANAR DIODES  
Reverse Voltage 100 Volts  
Peak Forward Current - 500mA  
SOD-80  
Cathode Indification  
FEATURES  
0.063(1.60)  
0.055(1.40)  
* Electrical data identical with the devices 1N4148  
* and 1N4448 respectively  
0.012(0.30)  
* Extreme fast switches  
0.146(3.70)  
0.130(3.30)  
MECHANICAL DATA  
Glass case  
Mini MELF / SOD 80  
JEDEC DO 213AA  
technical drawings  
accarding to DIN  
specifications  
Case : Mini MELF SOD-80 Glass Case  
Weight : approx. 0.05 gram  
*Dimensions in inches and (millimeters)  
ABSOLUTE MAXIMUM RATINGS ( T =25oC )  
J
SYMBOL  
VALUE  
100  
75  
UNIT  
V
PARAMETER  
Test Conditions  
V
RRM  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
V
V
R
tp = 1 us  
I
Peak Forward Surge Current  
Repetitive Peak Forward Current  
Forward Current  
2
A
FSM  
I
FRM  
500  
300  
150  
500  
175  
mA  
mA  
mA  
mW  
I
F
V
R
= 0  
Average Forward Current  
Power Dissipation  
IFAV  
PV  
oC  
oC  
T
Junction Temperature  
Storage Temperature Range  
J
T
STG  
-65 to +175  
MAXIMUM THERMAL RESISTANCE ( T =25oC )  
J
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
on PC Board 50mm x 50mm x 1.6mm  
R
Junction Ambient  
JA  
500  
K / W  
MAXIMUM THERMAL RESISTANCE ( T =25oC )  
J
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Volts  
nAdc  
( I = 5 mA )  
( I = 50 mA )  
F
( Type : LL4448 )  
0.62  
-
-
-
0.72  
1.0  
1.0  
F
V
( Type : LL4148 )  
( Type : LL4448 )  
0.86  
0.93  
F
Forward Voltage  
( I = 100 mA )  
F
( V = 20 V )  
R
-
-
-
-
-
-
25  
50  
5.0  
( V = 20 V, T =150oC )  
I
R
Reverse Current  
R
J
( V = 75 V )  
R
uAdc  
Volts  
pF  
( I = 100 uA, tp/T = 0.01, tp = 0.3 ms )  
V
(BR)  
Breakdown Voltage  
R
100  
-
-
-
-
-
4
-
( V = 0, f=1.0MHz, V = 50mV )  
C
D
Diode Capacitance  
R
HF  
( V = 2 V, f = 100MH  
)
Rectification Efficiency  
HF  
Z
r
45  
%
( I = I = 10mA, I = 1mA )  
-
-
-
-
8
4
F
R
R
t
Reverse Recovery Time  
nS  
rr  
( I = 10mA, VR = 6 V, I = 0.1 X IR, R = 100  
)
F
R
L
Zowie Technology Corporation  
REV. : 0  

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