Datasheet > LL101A

LL101A

更新时间： 2024-11-12 05:41:59

品牌	Logo	应用领域
JINANJINGHENG		小信号肖特基二极管
页数	文件大小	规格书
2页	100K
描述
SMALL SIGNAL SCHOTTKY DIODES

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LL101A 数据手册

LL101A THUR LL101C

SMALL SIGNAL SCHOTTKY DIODES

E M I C O N D U C T O R

FEATURES

Mini-MELF

For general purpose applications

The LL101 series is a Metal-on-silicon junction Schottky barrier device which

is protected by a PN junction guard ring. The low forward voltage drop

and fast switching make it ideal for protection of MOS devices, steering,

biasing, and coupling diodes for fast switching and low logic level applications

These diodes are also available in the DO-35 case with the type

designation SD101A to SD101C ,in the SOD-123 case type with the type designation

SD101AW to SD101CW and in the SOD-323 case type with the type designation

SD101AWS to SD101CWS,in the Micro-MELF case with type designation MCL101 to MCL103

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: Mini-MELF glass case(SOD-80 )

Weight: Approx. 0.05 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Value

Symbols

Units

Peak Reverse Voltage

LL101A

LL101B

LL101C

VRRM

400 ¹⁾

Power Dissipation (infinite Heat Sink)

Maximum Single cycle surge 10ms square wave

Junction temperature

Ptot

IFSM

2.0

125

Storage Temperature Range

-55 to+150

TSTG

1) Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS

(Ratings at 25 C ambient temperature unless otherwise specified)

Min.

Max.

Typ.

Unis

Symbols

LL101A

VRRM

Reverse breakover voltage

LL101B

LL101C

at I^R=10mA

LL101A

LL101B

Leakage current at VR=50V

VR=40V

V^R=30V

200

LL101C

0.41

0.4

0.39

0.95

0.9

LL101A

LL101B

LL101C

LL101A

LL101B

LL101C

Forward voltage drop at IF=1mA

I^F=15mA

2.0

2.1

2.2

LL101A

LL101B

LL101C

Junction Capacitance at VR=0V ,f=1MHz

trr

Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR

2-37

NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096

WWW.JIFUSEMICON.COM

JINAN JINGHENG CO., LTD.

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