Datasheet > L/Qxx04DyRP

L/Qxx04DyRP

更新时间： 2022-02-26 11:29:33

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
10页	715K
描述
4 Amp Sensitive & Standard Triacs

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L/Qxx04DyRP 数据手册

Teccor^®brandThyristors

4 Amp Sensitive & Standard Triacs

RoHS

Lxx04xx & Qxx04xx Series

Description

4 Amp bi-directional solid state switch series is designed

for AC switching and phase control applications such as

motor speed and temperature modulation controls, lighting

controls, and static switching relays.

Sensitive type devices guarantee gate control in Quadrants

I & IV needed for digital control circuitry.

Standard type devices normally operate in Quadrants I & III

triggered from AC line.

Features & Beneﬁts

• RoHS Compliant

contact bounce that

create voltage transients

Agency Approval

• Glass – passivated

junctions

• No contacts to wear out

from reaction of switching

events

Agency

Agency File Number

L Package : E71639

• Voltage capability up to

1000 V

• Restricted (or limited) RFI

generation, depending on

activation point of

• Surge capability up to

55 A

Main Features

• Electrically isolated

“L-Package” is UL

Recognized for 2500Vrms

sine wave

Symbol

I_T(RMS)

Value

Unit

• Requires only a small gate

activation pulse in each

half-cycle

• Solid-state switching

eliminates arcing or

V_DRM/V_RRM

I_{GT (Q1)}

400 to 1000

3 to 25

Applications

Schematic Symbol

Typical applications are AC solid-state switches, power

tools, home/brown goods and white goods appliances.

Sensitive gateTriacs can be directly driven by

microprocessor or popular opto-couplers/isolators.

MT2

MT1

Internally constructed isolated packages are offered for

ease of heat sinking with highest isolation voltage.

Absolute Maximum Ratings — SensitiveTriacs (4 Quadrants)

Symbol Parameter

I_T(RMS)

Value

Unit

Lxx04Ly

T_C= 90°C

T_C= 95°C

t = 20 ms

t = 16.7 ms

RMS on-state current

(full sine wave)

Lxx04Ry/Lxx04Vy/Lxx04Dy

f = 50 Hz

Non repetitive surge peak on-state current

(full cycle, T_Jinitial = 25°C)

I_TSM

f = 60 Hz

I²t

I²t Value for fusing

t_p= 8.3 ms

6.6

A²s

Critical rate of rise of on-state current

(I_G= 50mA with ≤ 0.1μs rise time)

di/dt

f = 120 Hz

A/μs

T_J= 110°C

I_GTM

P_G(AV)

T_stg

T_J

Peak gate trigger current

Average gate power dissipation

Storage temperature range

t_p≤ 10 μs

1.2

T_J= 110°C

0.3

°C

-40 to 150

-40 to 110

Operating junction temperature range

Note: xx = voltage, y = sensitivity

Speciﬁcations are subject to change without notice.

Revised: 05/03/16

12 3 4 5 6 7...10

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