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B1200C

更新时间: 2024-02-05 10:31:52
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
2页 128K
描述
Battrax SLIC Protector

B1200C 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOIC包装说明:SOC,
针数:3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.72
Is Samacsys:NJESD-30 代码:R-XDSO-C3
JESD-609代码:e3长度:4.325 mm
湿度敏感等级:1功能数量:1
端子数量:3封装主体材料:UNSPECIFIED
封装代码:SOC封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.65 mm
表面贴装:YES电信集成电路类型:SURGE PROTECTION CIRCUIT
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.625 mmBase Number Matches:1

B1200C 数据手册

 浏览型号B1200C的Datasheet PDF文件第2页 
Battrax SLIC Protector  
Battrax SLIC Protector  
This solid state protection device can be referenced to either a positive or negative voltage  
source. The B1xx0C_ is for a -VREF and the B2050C_ is for a +VREF. Designed using an  
SCR and a gate diode, the B1xx0C_ Battrax begins to conduct at |-VREF| + |-1.2 V| while the  
B2050C_ Battrax begins to conduct at |+VREF| + |1.2 V|.  
For a diagram of a Battrax application, see Figure 3.38.  
Pin 3  
(+V  
Pin 2  
(Ground)  
)
Pin 1  
REF  
(Line)  
Pin 3  
(-V  
)
REF  
Gate  
Pin 1  
Pin 2  
(Ground)  
(Line)  
+Battrax  
B2050C_  
-Battrax  
B1xx0C_  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
O
DRM  
S
T
DRM  
GT  
T
H
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
100  
Amps  
2.2  
mAmps  
100  
pF  
50  
50  
50  
50  
B1100C_  
B1160C_  
B1200C_  
B2050C_  
|-V  
|-V  
|-V  
| + |-1.2 V|  
| + |-1.2 V|  
| + |-1.2 V|  
|-V  
|-V  
|-V  
| + |-10 V|  
| + |-10 V|  
| + |-10 V|  
4
4
4
4
5
5
5
5
REF  
REF  
REF  
REF  
REF  
REF  
100  
100  
50  
2.2  
2.2  
2.2  
160  
200  
50  
|+V  
| + |1.2 V|  
|+V  
| + |10 V|  
REF  
REF  
* For individual “CA” and “CC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
I
I
is a repetitive surge rating and is guaranteed for the life of the product.  
PP  
PP  
ratings assume V  
= ±48 V.  
REF  
V
V
is measured at I  
DRM  
DRM.  
is measured at 100 V/µs.  
S
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed  
O
value.  
Positive Battrax information is preliminary data.  
V
V
maximum value for the negative Battrax is -200 V.  
maximum value for the positive Battrax is 110 V.  
REF  
REF  
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
60  
150  
50  
100  
20  
50  
500  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 50  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  

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