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8.0SMDJ18A PDF预览

8.0SMDJ18A

更新时间: 2024-01-19 10:53:24
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 949K
描述
Trans Voltage Suppressor Diode, 8000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

8.0SMDJ18A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:unknown
风险等级:5.78其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压:22.1 V最小击穿电压:20 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:8000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:6.5 W
参考标准:IEC-61000-4-2, 4-4最大重复峰值反向电压:18 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

8.0SMDJ18A 数据手册

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TVS Diodes  
Surface Mount –
8000W > 8.0SMDJ series  
Pb e3  
8.0SMDJ Series  
RoHS  
Description  
Uni-directional  
The 8.0SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• For surface mounted  
applications to optimize  
board space  
• compact size with high  
power density in DO-  
214AB Package  
• Low profile package  
• Low incremental surge  
resistance  
Typical IR less than 5μA  
when VBR min>22V  
Typical failure mode is  
short from over-specified  
voltage or current  
Agency Recognitions  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• Whisker test is conducted • High temperature reflow  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Built-in strain relief  
• Glass passivated chip  
junction  
soldering guaranteed:  
260°C/40sec  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• UL Recognized compound  
meeting flammability  
rating V-0  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
8000  
Unit  
W
Peak Pulse Power Dissipation at  
TL=25OC by 10/1000μs Waveform  
(Fig.2)(Note 1), (Note 2)  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
Power Dissipation on Infinite Heat  
Sink atTL=50OC  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
300  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only  
• 8kW peak pulse power  
capability at 10/1000μs  
VF  
5.0  
V
waveform, repetition rate • Pb-free E3 means 2nd level  
OperatingTemperature Range  
StorageTemperature Range  
TJ  
-65 to 150  
-65 to 175  
°C  
°C  
(duty cycles):0.01%  
interconnect is Pb-free  
and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
TSTG  
• Fast response time:  
typically less than 1.0ps  
from 0V to VBR min  
• Excellent clamping  
capability  
TypicalThermal Resistance Junction  
to Lead  
15  
75  
°C/W  
°C/W  
RθJL  
RθJA  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only,duty cycle=4 per minute maximum.  
Applications  
Functional Diagram  
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
Telecom, Computer, Industrial and Consumer electronic  
applications.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
©2019 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 06/10/19  

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