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8.0SMDJ110A-T7 PDF预览

8.0SMDJ110A-T7

更新时间: 2024-02-09 13:01:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 949K
描述
Trans Voltage Suppressor Diode, 8000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

8.0SMDJ110A-T7 数据手册

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TVS Diodes  
Surface Mount –
8000W > 8.0SMDJ series  
Pb e3  
8.0SMDJ Series  
RoHS  
Description  
Uni-directional  
The 8.0SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• For surface mounted  
applications to optimize  
board space  
• compact size with high  
power density in DO-  
214AB Package  
• Low profile package  
• Low incremental surge  
resistance  
Typical IR less than 5μA  
when VBR min>22V  
Typical failure mode is  
short from over-specified  
voltage or current  
Agency Recognitions  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• Whisker test is conducted • High temperature reflow  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Built-in strain relief  
• Glass passivated chip  
junction  
soldering guaranteed:  
260°C/40sec  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• UL Recognized compound  
meeting flammability  
rating V-0  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
8000  
Unit  
W
Peak Pulse Power Dissipation at  
TL=25OC by 10/1000μs Waveform  
(Fig.2)(Note 1), (Note 2)  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
Power Dissipation on Infinite Heat  
Sink atTL=50OC  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
300  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only  
• 8kW peak pulse power  
capability at 10/1000μs  
VF  
5.0  
V
waveform, repetition rate • Pb-free E3 means 2nd level  
OperatingTemperature Range  
StorageTemperature Range  
TJ  
-65 to 150  
-65 to 175  
°C  
°C  
(duty cycles):0.01%  
interconnect is Pb-free  
and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
TSTG  
• Fast response time:  
typically less than 1.0ps  
from 0V to VBR min  
• Excellent clamping  
capability  
TypicalThermal Resistance Junction  
to Lead  
15  
75  
°C/W  
°C/W  
RθJL  
RθJA  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only,duty cycle=4 per minute maximum.  
Applications  
Functional Diagram  
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
Telecom, Computer, Industrial and Consumer electronic  
applications.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
©2019 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 06/10/19  

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