J/SST201 SERIES
HIGH GAIN
Linear Integrated Systems
N-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
VGS(off) ≤ 1.5V
AV = 80 V/V
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
J SERIES
TO-92
SST SERIES
SOT-23
TOP VIEW
BOTTOM VIEW
-65 to +150 °C
-55 to +135 °C
1
D
S
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
3
G
D S G
2
1
2 3
350mW
50mA
Forward Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
-40V
-40V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
J/SST201, 202 -40
Gate to Source
BVGSS
IG = -1µA, VDS = 0V
Breakdown Voltage
J/SST204
J/SST201
J/SST202
J/SST204
J/SST201
J/SST202
J/SST204
-25
-0.3
-0.8
-0.3
0.2
0.9
0.2
-2
V
-1.5
-4
2
1
4.5
3
Gate to Source Cutoff
Voltage
VGS(off)
VDS = 15V, ID = 10nA
Drain to Source
IDSS
mA
pA
VDS = 15V, VGS = 0V
Saturation Current2
IGSS
IG
ID(off)
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
-100
VGS = -20V, VDS = 0V
VDG = 10V, ID = 0.1mA
VDS = 15V, VGS = -5V
-2
2
J/SST201, 204 0.5
J/SST202
Forward
gfs
mS
pF
V
DS = 15V, VGS = 0V, f = 1kHz
DS = 15V, VGS = 0V, f = 1MHz
Transconductance
1
Ciss
Crss
en
Input Capacitance
4.5
1.3
6
V
Reverse Transfer Capacitance
Noise Voltage
nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz
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