Datasheet > 存储 > 闪存> LH28F800SG-L

LH28F800SG-L

更新时间： 2024-02-16 23:47:16

品牌	Logo	应用领域
夏普 - SHARP		闪存
页数	文件大小	规格书
45页	320K
描述
8 M-bit (512 kB x 16) SmartVoltage Flash Memories

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LH28F800SG-L 数据手册

LH28F800SG-L/SGH-L (FOR TSOP, CSP)

8 M-bit (512 kB x 16) SmartVoltage

Flash Memories

LH28F800SG-L/SGH-L

(FOR TSOP, CSP)

DESCRIPTION

• Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

The LH28F800SG-L/SGH-L flash memories with

SmartVoltage technology are high-density, low-cost,

nonvolatile, read/write storage solution for a wide

range of applications. The LH28F800SG-L/SGH-L

can operate at VCC = 2.7 V and VPP = 2.7 V. Their

low voltage operation capability realizes longer

battery life and suits for cellular phone application.

Their symmetrically-blocked architecture, flexible

voltage and enhanced cycling capability provide for

highly flexible component suitable for resident flash

arrays, SIMMs and memory cards. Their enhanced

suspend capabilities provide for an ideal solution for

code + data storage applications. For secure code

storage applications, such as networking, where

code is either directly executed out of flash or

downloaded to DRAM, the LH28F800SG-L/SGH-L

offer three levels of protection : absolute protection

with VPP at GND, selective hardware block locking,

or flexible software block locking.These alternatives

give designers ultimate control of their code security

needs.

– Block erase/word write lockout during power

transitions

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture

– Sixteen 32 k-word erasable blocks

• Enhanced cycling capability

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC

in static mode

• Automated word write and block erase

– Command user interface

– Status register

• ETOX^TMV nonvolatile flash technology

FEATURES

• Packages

• SmartVoltage technology

– 48-pin TSOP TypeI (TSOP048-P-1220)

Normal bend/Reverse bend

– 2.7 V, 3.3 V or 5 V VCC

– 2.7 V, 3.3 V, 5 V or 12 V VPP

• High performance read access time

LH28F800SG-L70/SGH-L70

– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/

85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)

LH28F800SG-L10/SGH-L10

– 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/

120 ns (2.7 to 3.0 V)

– 48-ball CSP(FBGA048-P-0808)

ETOX is a trademark of Intel Corporation.

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

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与LH28F800SG-L相关器件

型号	品牌	获取价格	描述	数据表
LH28F800SG-L10	SHARP	获取价格	8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800SG-L70	SHARP	获取价格	8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800SGN-L10	SHARP	获取价格	8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800SGN-L100	ETC	获取价格	x16 Flash EEPROM
LH28F800SGN-L70	SHARP	获取价格	8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800SGR	SHARP	获取价格	Flash, 512KX16, 100ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, REVERSE, TSOP-48
LH28F800SGR-L10	ETC	获取价格	x16 Flash EEPROM
LH28F800SGR-L100	ETC	获取价格	x16 Flash EEPROM
LH28F800SGR-L70	ETC	获取价格	x16 Flash EEPROM
LH28F800SU	SHARP	获取价格	8M (512K 】 16, 1M 】 8) Flash Memory

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