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LH28F800BG-L PDF预览

LH28F800BG-L

更新时间： 2024-02-02 03:14:30
品牌 Logo 应用领域
夏普 - SHARP 闪存
页数 文件大小 规格书
40页 242K
描述
8 M-bit (512 kB x 16) SmartVoltage Flash Memory

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中文翻译

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LH28F800BG-L 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.81
最长访问时间：150 ns备用内存宽度：8
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
内存密度：8388608 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：64
端子数量：48字数：524288 words
字数代码：512000最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：16K
最大待机电流：0.000008 A子类别：Flash Memories
最大压摆率：0.04 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：NO类型：NOR TYPE
Base Number Matches：1

LH28F800BG-L 数据手册

 浏览型号LH28F800BG-L的Datasheet PDF文件第2页浏览型号LH28F800BG-L的Datasheet PDF文件第3页浏览型号LH28F800BG-L的Datasheet PDF文件第4页浏览型号LH28F800BG-L的Datasheet PDF文件第5页浏览型号LH28F800BG-L的Datasheet PDF文件第6页浏览型号LH28F800BG-L的Datasheet PDF文件第7页 
LH28F800BG-L (FOR SOP)  
8 M-bit (512 kB x 16) SmartVoltage  
Flash Memory  
LH28F800BG-L  
(FOR SOP)  
DESCRIPTION  
• Enhanced data protection features  
– Absolute protection with VPP = GND  
– Block erase/word write lockout during power  
transitions  
The LH28F800BG-L flash memory with Smart  
Voltage technology is a high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications. The LH28F800BG-L can  
operate at VCC = 2.7 V and VPP = 2.7 V. Its low  
voltage operation capability realizes longer battery  
life and suits for cellular phone application. Its boot,  
parameter and main-blocked architecture, flexible  
voltage and enhanced cycling capability provide for  
highly flexible component suitable for portable  
terminals and personal computers. Its enhanced  
suspend capabilities provide for an ideal solution for  
code + data storage applications. For secure code  
storage applications, such as networking, where  
code is either directly executed out of flash or  
downloaded to DRAM, the LH28F800BG-L offers  
two levels of protection : absolute protection with  
VPP at GND, selective hardware boot block locking.  
These alternatives give designers ultimate control of  
their code security needs.  
– Boot blocks protection except RP# = VHH  
• SRAM-compatible write interface  
• Optimized array blocking architecture  
– Two 4 k-word boot blocks  
– Six 4 k-word parameter blocks  
– Fifteen 32 k-word main blocks  
– Top or bottom boot location  
• Enhanced cycling capability  
– 100 000 block erase cycles  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases ICC  
in static mode  
• Automated word write and block erase  
– Command user interface  
– Status register  
• ETOXTM V nonvolatile flash technology  
• Package  
FEATURES  
– 44-pin SOP (SOP044-P-0600)  
• SmartVoltage technology  
– 2.7 V, 3.3 V or 5 V VCC  
ETOX is a trademark of Intel Corporation.  
– 2.7 V, 3.3 V, 5 V or 12 V VPP  
• High performance read access time  
LH28F800BG-L85  
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/  
100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)  
LH28F800BG-L12  
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/  
150 ns (2.7 to 3.6 V)  
• Enhanced automated suspend options  
– Word write suspend to read  
– Block erase suspend to word write  
– Block erase suspend to read  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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