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LH28F320S3TD-L10 PDF预览

LH28F320S3TD-L10

更新时间： 2024-11-06 22:14:47
品牌 Logo 应用领域
夏普 - SHARP 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
51页 290K
描述
32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

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LH28F320S3TD-L10 技术参数

生命周期：Obsolete包装说明：14 X 20 MM, PLASTIC, TSOP1-56
Reach Compliance Code：unknown风险等级：5.75
Is Samacsys：N最长访问时间：100 ns
其他特性：CONFIGURABLE AS 2M X 16JESD-30 代码：R-PDSO-G56
长度：18.4 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：56
字数：4194304 words字数代码：4000000
最高工作温度：70 °C最低工作温度：
组织：4MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL类型：NOR TYPE
宽度：14 mmBase Number Matches：1

LH28F320S3TD-L10 数据手册

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LH28F320S3TD-L10  
32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank)  
Smart 3 Dual Work Flash Memory  
LH28F320S3TD-L10  
DESCRIPTION  
• Scalable Command Set (SCS)  
• High performance read access time  
– 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)  
• Enhanced automated suspend options  
– Write suspend to read  
The LH28F320S3TD-L10 Dual Work flash memory  
with Smart 3 technology is a high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications, having high programming  
performance is achieved through highly-optimized  
page buffer operations. Its symmetrically-blocked  
architecture, flexible voltage and enhanced cycling  
capability provide for highly flexible component  
suitable for resident flash arrays, SIMMs and  
memory cards. Its enhanced suspend capabilities  
provide for an ideal solution for code + data storage  
applications. For secure code storage applications,  
such as networking, where code is either directly  
executed out of flash or downloaded to DRAM, the  
LH28F320S3TD-L10 offers three levels of  
protection : absolute protection with VPP at GND,  
selective hardware block locking, or flexible  
software block locking. These alternatives give  
designers ultimate control of their code security  
needs. LH28F320S3TD-L10 is conformed to the  
flash Scalable Command Set (SCS) and the  
Common Flash Interface (CFI) specification which  
enable universal and upgradable interface, enable  
the highest system/device data transfer rates and  
minimize device and system-level implementation  
costs.  
– Block erase suspend to write  
– Block erase suspend to read  
• Enhanced data protection features  
– Absolute protection with VPP = GND  
– Flexible block locking  
– Erase/write lockout during power transitions  
• SRAM-compatible write interface  
• User-configurable x8 or x16 operation  
• High-density symmetrically-blocked architecture  
– Sixty-four 64 k-byte erasable blocks  
• Enhanced cycling capability  
– 100 000 block erase cycles  
– 3.2 million block erase cycles/bank  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases Icc  
in static mode  
• Automated write and erase  
– Command user interface  
– Status register  
• ETOXTM V nonvolatile flash technology  
• Package  
– 56-pin TSOP Type I (TSOP056-P-1420)  
Normal bend  
FEATURES  
• Smart 3 Dual Work technology  
– 2.7 V or 3.3 V VCC  
ETOX is a trademark of Intel Corporation.  
– 2.7 V, 3.3 V or 5 V VPP  
– Capable of performing erase, write and read  
for each bank independently (Impossible to  
perform read from both banks at a time).  
• High-speed write performance  
– Two 32-byte page buffers/bank  
– 2.7 µs/byte write transfer rate  
• Common Flash Interface (CFI)  
– Universal & upgradable interface  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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