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LH28F160BGH-TL PDF预览

LH28F160BGH-TL

更新时间: 2024-01-24 11:06:33
品牌 Logo 应用领域
夏普 - SHARP 闪存
页数 文件大小 规格书
36页 225K
描述
16 M-bit (1 MB x 16) Smart 3 Flash Memories

LH28F160BGH-TL 技术参数

生命周期:Obsolete包装说明:SOP-44
Reach Compliance Code:unknown风险等级:5.76
最长访问时间:100 ns其他特性:USER CONFIGURABLE AS 1M X 16
JESD-30 代码:R-PDSO-G44长度:28.2 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:44字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:3.15 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:13.2 mmBase Number Matches:1

LH28F160BGH-TL 数据手册

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LH28F160BG-TL/BGH-TL  
16 M-bit (1 MB x 16) Smart 3  
Flash Memories  
LH28F160BG-TL/BGH-TL  
DESCRIPTION  
• Enhanced automated suspend options  
The LH28F160BG-TL/BGH-TL flash memories with  
Smart 3 technology are high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications. The LH28F160BG-TL/  
BGH-TL can operate at VCC and VPP = 2.7 V.  
Their low voltage operation capability realizes  
longer battery life and suits for cellular phone  
application. Their boot, parameter and main-blocked  
architecture, flexible voltage and enhanced cycling  
capability provide for highly flexible component  
suitable for portable terminals and personal  
computers. Their enhanced suspend capabilities  
provide for an ideal solution for code + data storage  
applications. For secure code storage applications,  
such as networking, where code is either directly  
executed out of flash or downloaded to DRAM, the  
LH28F160BG-TL/BGH-TL offer two levels of  
protection : absolute protection with VPP at GND,  
selective hardware boot block locking. These  
alternatives give designers ultimate control of their  
code security needs.  
– Word write suspend to read  
– Block erase suspend to word write  
– Block erase suspend to read  
• SRAM-compatible write interface  
• Optimized array blocking architecture  
– Two 4 k-word boot blocks  
– Six 4 k-word parameter blocks  
– Thirty-one 32 k-word main blocks  
– Top or bottom boot location  
• Enhanced cycling capability  
– 100 000 block erase cycles  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases ICC  
in static mode  
• Automated word write and block erase  
– Command user interface  
– Status register  
• ETOXTM V nonvolatile flash technology  
• Packages  
– 48-pin TSOP Type I (TSOP048-P-1220)  
Normal bend/Reverse bend  
FEATURES  
– 60-ball CSP (FBGA060/048-P-0811)  
• Smart 3 technology  
– 2.7 to 3.6 V VCC  
ETOX is a trademark of Intel Corporation.  
– 2.7 to 3.6 V or 12 V VPP  
• High performance read access time  
LH28F160BG-TL10/BGH-TL10  
– 100 ns (2.7 to 3.6 V)  
LH28F160BG-TL12/BGH-TL12  
– 120 ns (2.7 to 3.6 V)  
COMPARISON TABLE  
VERSIONS  
LH28F160BG-TL  
LH28F160BGH-TL  
LH28F160BV-TL  
LH28F160BVH-TL  
BIT CONFIGURATION  
1 MB x 16  
OPERATING TEMPERATURE  
0 to +70°C  
1 MB x 16  
25 to +85°C  
2 MB x 8/1 MB x 16  
2 MB x 8/1 MB x 16  
0 to +70°C  
40 to +85°C  
Refer to the datasheet of LH28F160BV-TL/BVH-TL.  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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