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LH1529

更新时间: 2024-09-13 03:51:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电信
页数 文件大小 规格书
3页 44K
描述
OPTICALLY COUPLED TELECOM SWITCH

LH1529 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.83
当前传输比率-最小值:33%最大正向电流:0.05 A
最大绝缘电压:3700 VJESD-609代码:e0
安装特点:SURFACE MOUNT元件数量:1
最高工作温度:85 °C最低工作温度:-40 °C
最大功率耗散:0.15 W子类别:Optocoupler - Transistor Outputs
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

LH1529 数据手册

 浏览型号LH1529的Datasheet PDF文件第2页浏览型号LH1529的Datasheet PDF文件第3页 
LH1529  
OPTICALLY COUPLED TELECOM SWITCH  
Preliminary Data Sheet  
FEATURES  
Package Dimensions in Inches (mm)  
• Solid State Relay and Optocoupler in One Package  
• Package—Single 8 Pin DIP  
Pin One I.D.  
8S  
4
5
3
2
1
A1  
K2  
• l/O Isolation, 3750 V  
RMS  
.268 (6.81)  
.255 (6.48)  
• Surface Mount Option  
• Optocoupler  
– Bidirectional Current Detection  
• Solid-state Relay  
7S’  
6A/K  
C3  
E4  
6
7
8
.390 (9.91)  
.379 (9.63)  
5A/K  
– Typical RON 20 Ω  
.305 Typ.  
(7.75) Typ.  
.045 (1.14)  
.030 (.76)  
– Load Voltage 350 V  
.150 (3.81)  
.130 (3.30)  
– Load Current 120 mA  
– Current Limit Protection  
– High Surge Capability  
– Linear, AC/DC Operation  
– Clean Bounce Free Switching  
– Low Power Consumption  
– High Reliability Monolithic Receptor  
.135 (3.43)  
.115 (2.92)  
4° Typ.  
10 ° Typ.  
3°–9°  
.012 (.30)  
.008 (.20)  
.040 (1.02)  
.030 (.76 )  
.022 (.56)  
.018 (.46)  
.100 (2.54) Typ.  
S” Bend Leads: Package Dimensions in Inches (mm)  
APPLICATIONS  
.400 (10.16)  
.380 (9.65)  
• General Telecom Switching  
– On/off Hook Control  
– Dial Pulse  
.100 (2.54)  
typ.  
– Ring Current Detection  
– Loop Current Sensing  
.260 (6.60)  
.240 (6.10)  
.480 (12.19)  
.460 (11.68)  
Pin 1  
Ident.  
Description  
.050 (1.27)  
.040 (1.01)  
.040 (1.02)  
.4 Pins  
The LH1529 Telecom switch consists of an optically coupled  
solid state relay (SSR) and a bidirectional input optocoupler.  
The SSR is ideal for performing switchhook and dial-pulse  
switching while the optocoupler performs ring detection and  
loop current sensing functions. Both the SSR and opto cou-  
.030 (.76)  
.055 (1.40)  
.045 (1.14)  
typ.  
.065  
(1.65)  
ref.  
.340 (8.64)  
.320 (8.13)  
.15 (.38)  
.008 (.20)  
.150 (3.81)  
.130 (3.30)  
pler provide 3750 V  
of input to ouput isolation.  
RMS  
.019 (.48)  
.009 (.23)  
.079  
(2.01)  
ref.  
.065 (1.65)  
.045 (1.14)  
The SSR is integrated on a monolithic receptor die using high  
voltage BCDMOS technology. The SSR features low ON-  
resistance, high breakdown voltage and current-limit cir-  
cuitry that protects the relay from telephone line induced  
lightning surges.  
Absolute Maximum Ratings  
Package  
Ambient Temperature Range.................................40 to +85°C  
Storage Temperature Range ...............................40 to +150°C  
Soldering Temperature (t=10 sec. max.)......................... 260°C  
The optocoupler provides bidirectional current sensing via  
two antiparallel GaAs infrared emitting diodes. The opto  
channel provides a minimum CTR of 33% at 6 mA.  
Isolation Test Voltage ................................................ 3750 V  
RMS  
Isolation Resistance  
V =500 V, T =25°C................................................... 10  
12  
11  
The LH1529 comes in a 8 pin, plastic DIP. To order packages  
with “S” bend leads, specify LH1529X00S.  
IO  
A
V =500 V, T =100°C................................................. 10  
IO  
A
Total Power Dissipation ................................................. 600 mW  
SSR  
LED Continuous Forward Current.....................................50 mA  
LED Reverse Voltage (I 10 µA)........................................... 8 V  
R
DC or Peak AC Load Voltage (I 50 µA)........................... 350 V  
L
Continous DC Load Current ...........................................120 mA  
Optocoupler  
LED Continuous Forward Current.....................................50 mA  
LED Reverse Voltage (I 10 µA)........................................... 3 V  
R
Collector to Emitter Breakdown Voltage .............................. 30 V  
Phototransistor Power Dissipation ................................. 150 mW  
5–202  

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