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LF444CN/NOPB PDF预览

LF444CN/NOPB

更新时间: 2024-11-04 12:05:51
品牌 Logo 应用领域
德州仪器 - TI 运算放大器光电二极管
页数 文件大小 规格书
18页 1189K
描述
LF444 Quad Low Power JFET Input Operational Ampli

LF444CN/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:GREEN, DIP-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:1.04
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00005 µA25C 时的最大偏置电流 (IIB):0.0001 µA
最小共模抑制比:70 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.00005 µA
最大输入失调电压:5000 µVJESD-30 代码:R-PDIP-T14
JESD-609代码:e3长度:19.177 mm
低-偏置:YES低-失调:NO
微功率:YES湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:4端子数量:14
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP14,.3封装形状:RECTANGULAR
封装形式:IN-LINE包装方法:TUBE
峰值回流温度(摄氏度):NOT APPLICABLE功率:NO
电源:+-15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:5.33 mm
标称压摆率:1 V/us子类别:Operational Amplifier
最大压摆率:0.2 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1000 kHz
最小电压增益:15000宽带:NO
宽度:6.35 mmBase Number Matches:1

LF444CN/NOPB 数据手册

 浏览型号LF444CN/NOPB的Datasheet PDF文件第2页浏览型号LF444CN/NOPB的Datasheet PDF文件第3页浏览型号LF444CN/NOPB的Datasheet PDF文件第4页浏览型号LF444CN/NOPB的Datasheet PDF文件第5页浏览型号LF444CN/NOPB的Datasheet PDF文件第6页浏览型号LF444CN/NOPB的Datasheet PDF文件第7页 
LF444  
www.ti.com  
SNOSC04D MAY 1998REVISED MARCH 2013  
LF444 Quad Low Power JFET Input Operational Amplifier  
Check for Samples: LF444  
1
FEATURES  
DESCRIPTION  
The LF444 quad low power operational amplifier  
provides many of the same AC characteristics as the  
industry standard LM148 while greatly improving the  
DC characteristics of the LM148. The amplifier has  
the same bandwidth, slew rate, and gain (10 kΩ load)  
as the LM148 and only draws one fourth the supply  
current of the LM148. In addition the well matched  
high voltage JFET input devices of the LF444 reduce  
the input bias and offset currents by a factor of  
10,000 over the LM148. The LF444 also has a very  
low equivalent input noise voltage for a low power  
amplifier.  
23  
¼ Supply Current of a LM148: 200 μA/Amplifier  
(max)  
Low Input Bias Current: 50 pA (max)  
High Gain Bandwidth: 1 MHz  
High Slew Rate: 1 V/μs  
Low Noise Voltage for Low Power 35 nV/Hz  
Low Input Noise Current 0.01 pA/Hz  
High Input Impedance: 1012Ω  
High Gain: 50k (min)  
The LF444 is pin compatible with the LM148 allowing  
an immediate 4 times reduction in power drain in  
many applications. The LF444 should be used  
wherever low power dissipation and good electrical  
characteristics are the major considerations.  
Simplified Schematic  
Connection Diagram  
Figure 1. 1/4 Quad  
Figure 2. PDIP/SOIC Package  
Top View  
See Package Number NAK0014D, D0014A or  
NFF0014A  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
BI-FET is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1998–2013, Texas Instruments Incorporated  

LF444CN/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LF444CN TI

完全替代

LF444 Quad Low Power JFET Input Operational Ampli
TL064IN TI

类似代替

LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS
TL064BCN TI

类似代替

LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS

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