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LF442AMH PDF预览

LF442AMH

更新时间: 2024-09-20 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
12页 443K
描述
Dual Low Power JFET Input Operational Amplifier

LF442AMH 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BCY包装说明:METAL CAN-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.14放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.00005 µA
25C 时的最大偏置电流 (IIB):0.00005 µA最小共模抑制比:80 dB
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电压:1000 µVJESD-30 代码:O-MBCY-W8
JESD-609代码:e0低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:-22 V
标称负供电电压 (Vsup):-20 V功能数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:METAL
封装等效代码:CAN8,.2封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
电源:+-15 V认证状态:Not Qualified
最小摆率:0.8 V/us标称压摆率:1 V/us
子类别:Operational Amplifier最大压摆率:0.4 mA
供电电压上限:22 V标称供电电压 (Vsup):20 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE标称均一增益带宽:1000 kHz
最小电压增益:50000Base Number Matches:1

LF442AMH 数据手册

 浏览型号LF442AMH的Datasheet PDF文件第2页浏览型号LF442AMH的Datasheet PDF文件第3页浏览型号LF442AMH的Datasheet PDF文件第4页浏览型号LF442AMH的Datasheet PDF文件第5页浏览型号LF442AMH的Datasheet PDF文件第6页浏览型号LF442AMH的Datasheet PDF文件第7页 
April 1999  
LF442  
Dual Low Power JFET Input Operational Amplifier  
General Description  
Features  
n 1/10 supply current of a LM1458: 400 µA (max)  
n Low input bias current: 50 pA (max)  
n Low input offset voltage: 1 mV (max)  
n Low input offset voltage drift: 10 µV/˚C (max)  
n High gain bandwidth: 1 MHz  
The LF442 dual low power operational amplifiers provide  
many of the same AC characteristics as the industry stan-  
dard LM1458 while greatly improving the DC characteristics  
of the LM1458. The amplifiers have the same bandwidth,  
slew rate, and gain (10 kload) as the LM1458 and only  
draw one tenth the supply current of the LM1458. In addition  
the well matched high voltage JFET input devices of the  
LF442 reduce the input bias and offset currents by a factor of  
10,000 over the LM1458. A combination of careful layout de-  
sign and internal trimming guarantees very low input offset  
voltage and voltage drift. The LF442 also has a very low  
equivalent input noise voltage for a low power amplifier.  
n High slew rate: 1 V/µs  
n Low noise voltage for low power:  
n Low input noise current:  
n High input impedance: 1012Ω  
=
=
10V, RL 10k: 50k (min)  
±
n High gain VO  
The LF442 is pin compatible with the LM1458 allowing an  
immediate 10 times reduction in power drain in many appli-  
cations. The LF442 should be used where low power dissi-  
pation and good electrical characteristics are the major con-  
siderations.  
Typical Connection  
Connection Diagrams  
Metal Can Package  
DS009155-2  
Pin 4 connected to case  
Top View  
DS009155-1  
Ordering Information  
LF442XYZ  
Order Number LF442AMH or LF442MH  
or LF442MH/883  
See NS Package Number H08A  
Dual-In-Line Package  
X
Y
indicates electrical grade  
indicates temperature range  
“M” for military  
“C” for commercial  
indicates package type  
“H” or “N”  
Z
DS009155-4  
Top View  
Order Number LF442ACN or LF442CN  
See NS Package Number N08E  
BI-FET II is a trademark of National Semiconductor Corporation.  
© 1999 National Semiconductor Corporation  
DS009155  
www.national.com  

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