LF442

更新时间： 2024-11-07 22:47:11

品牌	Logo	应用领域
美国国家半导体 - NSC		运算放大器
页数	文件大小	规格书
12页	443K
描述
Dual Low Power JFET Input Operational Amplifier

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LF442 数据手册

April 1999

LF442

Dual Low Power JFET Input Operational Amplifier

General Description

Features

n 1/10 supply current of a LM1458: 400 µA (max)

n Low input bias current: 50 pA (max)

n Low input offset voltage: 1 mV (max)

n Low input offset voltage drift: 10 µV/˚C (max)

n High gain bandwidth: 1 MHz

The LF442 dual low power operational amplifiers provide

many of the same AC characteristics as the industry stan-

dard LM1458 while greatly improving the DC characteristics

of the LM1458. The amplifiers have the same bandwidth,

slew rate, and gain (10 kΩ load) as the LM1458 and only

draw one tenth the supply current of the LM1458. In addition

the well matched high voltage JFET input devices of the

LF442 reduce the input bias and offset currents by a factor of

10,000 over the LM1458. A combination of careful layout de-

sign and internal trimming guarantees very low input offset

voltage and voltage drift. The LF442 also has a very low

equivalent input noise voltage for a low power amplifier.

n High slew rate: 1 V/µs

n Low noise voltage for low power:

n Low input noise current:

n High input impedance: 10¹²Ω

10V, R_L10k: 50k (min)

n High gain V_O

The LF442 is pin compatible with the LM1458 allowing an

immediate 10 times reduction in power drain in many appli-

cations. The LF442 should be used where low power dissi-

pation and good electrical characteristics are the major con-

siderations.

Typical Connection

Connection Diagrams

Metal Can Package

DS009155-2

Pin 4 connected to case

Top View

DS009155-1

Ordering Information

LF442XYZ

Order Number LF442AMH or LF442MH

or LF442MH/883

See NS Package Number H08A

Dual-In-Line Package

indicates electrical grade

indicates temperature range

“M” for military

“C” for commercial

indicates package type

“H” or “N”

DS009155-4

Top View

Order Number LF442ACN or LF442CN

See NS Package Number N08E

™

BI-FET II is a trademark of National Semiconductor Corporation.

DS009155

www.national.com

12 3 4 5 6 7...12

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