5秒后页面跳转
LF411MWG-QMLV PDF预览

LF411MWG-QMLV

更新时间: 2024-11-21 13:09:19
品牌 Logo 应用领域
德州仪器 - TI 运算放大器光电二极管输入元件
页数 文件大小 规格书
7页 171K
描述
OP-AMP, 2000uV OFFSET-MAX, 4MHz BAND WIDTH, CDSO10, CERAMIC, SOIC-10

LF411MWG-QMLV 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:CERAMIC, SOIC-10针数:10
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.09
放大器类型:OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB):0.0002 µA
标称共模抑制比:100 dB最大输入失调电压:2000 µV
JESD-30 代码:R-GDSO-G10JESD-609代码:e0
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:10最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, GLASS-SEALED
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified筛选级别:MIL-PRF-38535 Class V
座面最大高度:2.33 mm标称压摆率:15 V/us
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称均一增益带宽:4000 kHz
宽度:6.12 mmBase Number Matches:1

LF411MWG-QMLV 数据手册

 浏览型号LF411MWG-QMLV的Datasheet PDF文件第2页浏览型号LF411MWG-QMLV的Datasheet PDF文件第3页浏览型号LF411MWG-QMLV的Datasheet PDF文件第4页浏览型号LF411MWG-QMLV的Datasheet PDF文件第5页浏览型号LF411MWG-QMLV的Datasheet PDF文件第6页浏览型号LF411MWG-QMLV的Datasheet PDF文件第7页 
LF411  
JFET-INPUT OPERATIONAL AMPLIFIER  
SLOS011C – MARCH 1987 – REVISED OCTOBER 1997  
D OR P PACKAGE  
(TOP VIEW)  
Low Input Bias Current, 50 pA Typ  
Low Input Noise Current, 0.01 pA/Hz Typ  
Low Supply Current, 2 mA Typ  
BAL1  
IN–  
NC  
V
1
2
3
4
8
7
6
5
12  
High Input impedance, 10 Typ  
CC+  
IN+  
OUT  
Low Total Harmonic Distortion  
Low 1/f Noise Corner, 50 Hz Typ  
V
BAL2  
CC–  
Package Options Include Plastic  
Small-Outline (D) and Standard (P) DIPs  
NC – No internal connection  
description  
This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage and  
amaximuminputoffsetvoltagedrift. Itrequireslowsupplycurrent, yetmaintainsalargegain-bandwidthproduct  
and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset  
currents.  
The LF411 can be used in applications such as high-speed integrators, digital-to-analog converters,  
sample-and-hold circuits, and many other circuits.  
The LF411C is characterized for operation from 0°C to 70°C. The LF411I is characterized for operation from  
–40°C to 85°C.  
symbol  
2
3
+
IN –  
IN +  
6
OUT  
1
5
BAL1  
BAL2  
AVAILABLE OPTIONS  
PACKAGE  
SMALL OUTLINE  
V
max  
IO  
T
A
PLASTIC DIP  
(P)  
AT 25°C  
(D)  
0°C to 70°C  
2 mV  
2 mV  
LF411CD  
LF411ID  
LF411CP  
LF411IP  
–40°C to 85°C  
The D packages are available taped and reeled. Add the suffix R to the  
device type (i.e., LF411CDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

与LF411MWG-QMLV相关器件

型号 品牌 获取价格 描述 数据表
LF411MWGRLQMLV TI

获取价格

航天级、单路、30V、3MHz、低失调电压运算放大器 | NAC | 10 | -55 t
LF411-N TI

获取价格

Low Offset, Low Drift JFET Input Operational Amplifier
LF411P TI

获取价格

JFET-INPUT OPERATIONAL AMPLIFIER
LF411QML TI

获取价格

LF411QML Low Offset, Low Drift JFET Input Operational Amplifier
LF411QML-SP TI

获取价格

航天级、单路、30V、3MHz、低失调电压运算放大器
LF411XYZ NSC

获取价格

Low Offset, Low Drift JFET Input Operational Amplifier
LF412 NSC

获取价格

Low Offset, Low Drift Dual JFET Input Operational Amplifier
LF412 TI

获取价格

LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier
LF-412 SIRENZA

获取价格

Wideband RF/Pulse Transformers .01-25 MHz
LF412 MD8 TI

获取价格

Military-grade, dual, 30-V, 4-MHz, FET-input operational amplifier | Y | 0 | -55 to 125